Interposer Via Isolation Structure for Off-Landing and Leakage
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and reliable packaging techniques for semiconductor dies, particularly in reducing the risk of off-landing and electric leakage in interposer structures.
Innovation Solution
The implementation of an interposer with an encapsulated interconnection die and a redistribution structure, featuring through-substrate vias, oversized conductive vias, and isolation layers around the vias, which reduces the risk of off-landing and electric leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If through-substrate vias are made small and high density, then integration density is improved, but the risk of off-landing and electric leakage increases
Solution Approach 1:
The via structure is segmented into multiple functional layers: the through-substrate via (small, high density) is separated from the conductive via (oversized) by an isolation layer. This segmentation allows the small via to provide high density interconnection while the oversized conductive via provides a large landing area, and the isolation layer prevents electric leakage by electrically separating the via from the substrate.
Solution Approach 2:
An isolation layer is introduced as an intermediary element between the through-substrate via and the substrate. This isolation layer serves as a mediator that prevents direct electrical contact between the via and the substrate, thereby eliminating the risk of electric leakage while allowing the via to maintain its small dimensions for high density.
2Reliability
If conductive vias are oversized, then the risk of off-landing is reduced, but the area occupied by each via increases
Solution Approach 1:
The via system is divided into two distinct components: the through-substrate via with small cross-section for high density, and the oversized conductive via for reliable landing. The isolation layer separates these components, allowing each to optimize its dimensions for its specific function without compromising the other.
Solution Approach 2:
The solution transitions from a two-dimensional planar via to a three-dimensional structure with vertical separation. The isolation layer creates a vertical barrier that allows the conductive via to be oversized in the horizontal plane without increasing its footprint, as the isolation layer occupies the vertical space between the via and the substrate.
Data Source
AI summary
In an embodiment, a device includes: an interposer including: a back-side redistribution structure; an interconnection die over the back-side redistribution structure, the interconnection die including a substrate, a through-substrate via protruding from the substrate, and an isolation layer around the through-substrate via; a first encapsulant around the interconnection die, a surface of the first encapsulant being substantially coplanar with a surface of the isolation layer and a surface of the through-substrate via; and a front-side redistribution structure over the first encapsulant, the front-side redistribution structure including a first conductive via that physically contacts the through-substrate via, the isolation layer separating the first conductive via from the substrate.