3D Organic Glass Interposer Via Fabrication
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Solution Overview
Problem
Existing methods for forming vias in glass or organic substrates are slow, prone to defects, struggle with tight pitches and small dimensions, and fail to achieve vertical sidewalls, leading to degraded transmission and challenges in plating aspect ratios greater than depth/diameter=10.
Innovation Solution
A method involving the formation of lined metal vias in a substrate, removal of the substrate with an insulator material acting as an etch stop, and subsequent connection to wiring layers, followed by forming a new substrate around the vias, using techniques like reactive ion etching and electroplating to achieve precise positioning and scalability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If known processing methods (laser ablation, electric discharge, blasting) are used to form vias in glass substrates, then via formation is achieved, but defects are created in the substrate and sidewalls are non-vertical
Solution Approach 1:
A silicon-based substrate is introduced as an intermediary medium to form high-quality vias with vertical sidewalls, which are then transferred to the glass or organic substrate. The silicon substrate acts as a sacrificial template that enables precise via formation using standard semiconductor processing techniques, avoiding direct processing of the final substrate that would cause defects.
Solution Approach 2:
Via formation is performed preliminarily on the silicon substrate before final substrate attachment. The vias are formed, lined, and filled with metal while the silicon substrate is still present, allowing for controlled processing. The silicon substrate is then removed and replaced with the target glass or organic substrate, transferring the pre-formed vias to the final structure.
2Manufacturing precision
If conventional via formation methods are used in glass or organic substrates, then via creation is possible, but tight pitches and very small via dimensions cannot be achieved
Solution Approach 1:
The silicon-based substrate serves as an intermediary that enables precise via formation. Standard semiconductor processing tools and techniques optimized for silicon can be used to create vias with tight pitches and small dimensions on the silicon substrate, achieving manufacturing precision that is then transferred to the final glass or organic substrate structure.
3Manufacturing precision
If non-vertical sidewalls are present in vias, then via formation is achieved, but transmission through the vias is significantly degraded
Solution Approach 1:
The silicon substrate acts as a mediator that enables formation of vias with vertical sidewalls using reactive ion etching and other controlled processes. These vertically-sided vias are then transferred to the final substrate structure, ensuring good transmission properties are achieved in the completed device.
Solution Approach 2:
Mechanical or thermal processes that create non-vertical sidewalls are replaced with controlled chemical etching processes (such as reactive ion etching) that produce vertical sidewalls. This substitution of the etching mechanism enables precise control over via geometry and sidewall angle, improving transmission quality.
4Manufacturing precision
If aspect ratios greater than depth/diam=10 need to be plated, then high aspect ratio via formation is required, but this is difficult in glass or organic substrates
Solution Approach 1:
The silicon substrate serves as a sacrificial intermediary that enables formation of high aspect ratio vias with controlled geometry. The vias are formed and prepared for plating on the silicon substrate where processing control is excellent, achieving aspect ratios greater than 10:1. The silicon substrate is then removed and replaced with the final substrate, preserving the high aspect ratio via structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the fabrication of small diameter through silicon vias with tight pitches, precise positioning, and 90-degree sidewalls in glass or organic substrates, eliminating defects and high temperature exposure, while allowing for faster and more scalable production.
Implementation Method 1
removing the silicon based substrate with the insulator material acting as an etch stop to protect the metal material within the plurality of openings
Implementation Method 2
forming metal material on the insulator material within the plurality of openings
Data Source
AI summary
A three-dimensional organic structure or glass interposer structure and methods of manufacture are disclosed. The method includes forming lined metal vias in a substrate. The method further includes removing the substrate, leaving the lined metal vias. The method further includes forming a new substrate about the lined metal vias. The method also includes connecting the lined metal vias to wiring layers using back end of the line processes.