Interposer Waveguide for High-Speed Semiconductor Die Communication

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Solution Overview

Problem

Existing interconnect technologies such as microstrips and striplines cannot scale to meet the increasing signaling demands as Serializer/Deserializer per-lane speed approaches 100 GHz to 200 GHz, due to high resistive and capacitive losses, limiting practical effective bandwidth to 10 GHz to 30 GHz.

Innovation Solution

The use of an interposer layer with an integrated waveguide, where a waveguide member made from a material with a high relative permittivity is combined with a dielectric member of lower relative permittivity, forming a planar structure with conductive sheets on either side, to facilitate bidirectional data exchange between semiconductor dies via microwave signals, exceeding 100 GHz bandwidth.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If microstrips or striplines are used to communicably couple semiconductor dies, then the structure is simple and easy to manufacture, but the communication speed is limited to 10 GHz to 30 GHz due to high resistive and capacitive losses

Engineering Contradiction:

Improvecommunication speedVSAvoidresistive and capacitive losses

Core Design Contradiction:

SpeedVSLoss of energy

Solution Approach 1:

The patent replaces traditional electrical transmission lines (microstrips and striplines) with an optical waveguide system. Light signals propagate through the waveguide formed by the interposer layer, eliminating the resistive and capacitive losses inherent in electrical conductors. This substitution of electrical transmission with optical transmission enables communication speeds exceeding 100 GHz while dramatically reducing energy loss.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental transmission parameter from electrical signals to optical signals. By utilizing the waveguide structure with specific refractive index properties, the system transitions from electrical field propagation subject to resistance and capacitance to electromagnetic wave propagation in the optical regime, achieving bandwidths greater than 100 GHz with minimal attenuation.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If traditional interconnect technologies are used, then the manufacturing process is conventional and straightforward, but the effective bandwidth is limited to 10 GHz to 30 GHz

Engineering Contradiction:

Improveeffective bandwidthVSAvoidwaveguide structure complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The interposer layer serves multiple functions simultaneously: it provides mechanical support for the semiconductor dies, establishes electrical connections through through-vias, and guides optical signals through the waveguide structure. This multi-functionality allows the system to achieve high bandwidth communication without adding separate components, thereby managing complexity while maximizing productivity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The waveguide structure utilizes composite material layers with different refractive indices within the interposer layer. This composite structure creates the necessary optical confinement for waveguide operation while maintaining mechanical integrity and electrical connectivity, enabling high bandwidth performance through material composition rather than complex geometric structures.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides an order of magnitude increase in communication speed between semiconductor dies, exceeding conventional microstrip and stripline-based systems, enabling efficient data exchange up to 200 GHz or more.

Implementation Method 1

an interposer layer with an integrated waveguide, where a waveguide member made from a material with a high relative permittivity is combined with a dielectric member of lower relative permittivity, forming a planar structure with conductive sheets on either side, to facilitate bidirectional data exchange between semiconductor dies via microwave signals

Methodology Applied

Scientific EffectWaveguide: Waveguide

Implementation Method 2

a waveguide member made from a material with a high relative permittivity is combined with a dielectric member of lower relative permittivity

Methodology Applied

Scientific EffectDielectric Permittivity: Dielectric Permittivity

Data Source

PatentUS11450629B2Intra-semiconductor die communication via waveguide in a multi-die semiconductor package

Publication Date: 2022.09.20 INTEL CORP

AI summary

An interposer layer includes an integral waveguide to facilitate high speed (e.g., greater than 80 GHz) communication between semiconductor dies in a semiconductor package. An interposer layer may include a waveguide member and a dielectric layer disposed adjacent at least a portion of an exterior perimeter of the waveguide member. The waveguide member includes a material having a first relative permittivity. The dielectric member includes a material having a second relative permittivity that is less than the first relative permittivity. The waveguide member and the dielectric member form an interposer layer having an upper surface and a lower surface. A first conductive sheet may be disposed proximate the upper surface of the interposer layer and a second conductive sheet may be disposed proximate the lower surface of the interposer layer.