Intra-Metal Capacitor Multi-Mask Electrode Spacing
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Solution Overview
Problem
Conventional intra-metal capacitors are limited by photolithographic resolution, constraining the spacing between electrodes and resulting in limited capacitance and scalability in semiconductor devices.
Innovation Solution
A multi-mask approach is used to form intra-metal capacitors, allowing for adjustable spacing between electrodes within the dielectric layer, enabling a thinner insulating layer and increased capacitance without resolution limitations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single photo mask is used to form electrodes side-by-side in the dielectric layer, then the manufacturing process is simple and integrated with interconnecting structure formation, but the spacing between electrodes is constrained to the resolution limitation of the patterning process
Solution Approach 1:
The patent divides the electrode formation process into separate steps using multiple photo masks. First electrodes are formed in a preliminary pattern, then a second photo mask is used to define the final electrode positions and spacing. This segmentation allows the spacing to be controlled independently from the electrode formation, overcoming the resolution limitation of a single patterning step while maintaining process integration.
2Quantity of substance
If the thickness of the intermediate insulating layer is reduced to increase capacitance, then the capacitance density increases, but the spacing between electrodes becomes constrained by the minimum resolution of the patterning process
Solution Approach 1:
The patent performs preliminary electrode formation in a first patterning step, establishing electrode positions that are then refined in a second patterning step. This preliminary action allows the intermediate insulating layer to be made thinner for higher capacitance density while the second patterning step independently controls the final electrode spacing without being constrained by the minimum resolution of a single patterning process.
3Area of stationary object
If the spacing between electrodes is reduced to minimize device area, then the capacitance increases, but the spacing is limited by the resolution of the patterning process
Solution Approach 1:
The patent introduces an additional dimension to the patterning process by using multiple photo masks stacked or aligned in different positions. This dimensional approach allows independent control of electrode spacing from electrode formation, enabling spacing to be reduced below the conventional single-step patterning resolution limit while maintaining manufacturing feasibility.
Data Source
AI summary
A method of forming a capacitor includes the following steps. First, a substrate is provided. A dielectric layer is formed over the substrate. A first patterning process is performed to form a first contact plug through the whole thickness of the dielectric layer and a second patterning process is performed to form a second contact plug in the dielectric layer and spaced apart from the first contact plug in a pre-determined distance, wherein the first contact plug and the second contact plug are capacitively coupled.