Inverse Lithography Phase Shift Mask Design

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Solution Overview

Problem

Current phase shift masks with low light transmission, such as 6%, suffer from background printing of unwanted features, which can be suppressed by applying a second patch layer but requires an additional design and manufacturing step, increasing resource consumption.

Innovation Solution

Generating a high transmission phase shift mask layout using inverse lithography techniques, where the transmission value of each pixel is determined to minimize an objective function related to the optical lithographic process, allowing for main features with 100% transmission and phase shift areas with transmission values greater than 6%, eliminating the need for a patching step.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If a second patch layer is applied to suppress background printing, then unwanted feature printing is reduced, but device complexity and manufacturing steps increase

Engineering Contradiction:
Improvebackground printing of unwanted featuresVSAvoidmask structure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent extracts and removes the second patch layer from the mask structure, retaining only the essential first patch layer. This simplification eliminates unnecessary manufacturing steps while maintaining sufficient suppression of unwanted feature printing through optimized parameters of the remaining patch layer.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent optimizes parameters of the first patch layer, such as its transmission value and positioning, to achieve effective suppression of background printing. By adjusting these parameters, the system achieves the desired functionality without requiring an additional patch layer, thus reducing complexity.

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If a second patch layer is applied to suppress background printing, then unwanted feature printing is reduced, but manufacturing time and resource consumption increase

Engineering Contradiction:
Improvebackground printing of unwanted featuresVSAvoidmanufacturing time
Core Design Contradiction:
Object-generated harmful factorsVSLoss of time

Solution Approach 1:

The patent removes the second patch layer from the manufacturing process, eliminating the time required for its deposition and alignment. This extraction of the unnecessary step directly reduces manufacturing time and resource consumption while maintaining effective suppression of unwanted feature printing.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

By optimizing the transmission value and positioning parameters of the first patch layer, the patent achieves the same functional outcome as a two-layer structure would provide, but with significantly reduced manufacturing time and resource consumption due to the elimination of the second layer.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If transmission value is increased for phase shift areas, then depth of focus and critical dimension uniformity improve, but background printing of unwanted features increases

Engineering Contradiction:
Improvecritical dimension uniformityVSAvoidbackground printing of unwanted features
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies different transmission values to different regions of the mask. The first patch layer is positioned at specific locations with optimized transmission values that balance two competing requirements: providing sufficient phase shift for improved critical dimension uniformity while limiting transmission to prevent background printing of unwanted features.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes the transmission value parameter of the first patch layer to a specific range that simultaneously achieves improved depth of focus and critical dimension uniformity while preventing unwanted feature printing. This parameter optimization resolves the contradiction by finding the optimal balance point.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8510686B2Inverse lithography for high transmission attenuated phase shift mask design and creation
Publication Date: 2013.08.13 INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)
  • US8510686B2 patent drawing
  • US8510686B2 patent drawing
  • US8510686B2 patent drawing

AI summary

Various implementations of the invention provide for generation of a high transmission phase shift mask layout through inverse lithography techniques. In various implementations of the present invention, a set of mask data having a plurality of pixels is generated. The transmission value associated with each pixel may then be determined through an inverse lithography technique. With various implementations of the invention, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined.