Inverted Lateral BJT Charge Sensor for Real-Time Detection

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Solution Overview

Problem

Conventional sensors for radiation and bio-detection face limitations in real-time readout, sensitivity, and portability due to complex structures and the need for specialized instruments, which restrict their application in various environments.

Innovation Solution

A smart charge sensor is developed using an inverted lateral semiconductor-on-insulator (SOI) bipolar junction transistor (BJT) with a detection layer, enabling real-time charge measurement and long-term tracking, and can be engineered for specific applications such as radiation or bio-detection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional sensors (Geiger counters, bio-sensors) are used for detection, then detection capability is achieved, but real-time readout and portability are limited due to complex structures and specialized instruments required

Engineering Contradiction:
Improvedetection capabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the detection function with a standard bipolar junction transistor (BJT) structure. The BJT's base region serves dual purposes: as the active element for charge detection and as the sensing region itself. This integration eliminates the need for separate detection mechanisms and specialized instruments, enabling real-time readout with conventional electronics while maintaining detection capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The BJT structure is designed to perform multiple functions: charge detection, signal amplification, and real-time readout. The base region acts as both the sensing element and the active component of the transistor, allowing the same structure to detect charges from various sources (radiation, biochemical interactions) without requiring different specialized instruments for each application.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If better resolution/sensitivity is achieved in bio-sensors, then detection precision improves, but processing time increases and portability is limited

Engineering Contradiction:
Improveresolution/sensitivityVSAvoidprocessing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces complex biochemical processing mechanisms with the electrical detection mechanism of the BJT. Instead of relying on time-consuming biochemical reactions and laboratory instruments for high sensitivity, the BJT directly detects charges generated by radiation or biochemical interactions through its electrical characteristics, achieving high resolution/sensitivity with real-time readout capability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The smart charge sensor provides high sensitivity and long-term charge retention, allowing for real-time measurements and improved detection capabilities without the limitations of existing technologies, making it suitable for diverse applications including radiation and bio-sensing.

Implementation Method 1

A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor

Methodology Applied
Scientific EffectCharge accumulation: Electrical Accumulator

Implementation Method 2

A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor

Methodology Applied
Scientific EffectBipolar junction transistor operation:

Data Source

PatentUS9377543B2Charge sensors using inverted lateral bipolar junction transistors
Publication Date: 2016.06.28 GLOBALFOUNDRIES US INC
  • US9377543B2 patent drawing
  • US9377543B2 patent drawing
  • US9377543B2 patent drawing

AI summary

A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.