Inverted Insulation Pattern via Organic Mold Removal
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Solution Overview
Problem
Current semiconductor manufacturing methods require complex etching steps and resist patterns, which can lead to intermixing and poor insulating properties in the formation of insulation patterns, especially in damascene processes.
Innovation Solution
An insulation pattern-forming method involving the formation of organic patterns on a substrate, filling spaces with insulating material, removing the organic patterns to create an inverted pattern, and curing it, using a polysiloxane-based material and organic solvent, which avoids complex etching and ensures excellent filling and dry etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If complex etching steps and resist patterns are used, then fine patterns can be formed on substrates, but intermixing occurs and insulating properties deteriorate
Solution Approach 1:
The invention extracts and removes the problematic resist pattern material after it has served its purpose as a mold. By applying an alkali solution to dissolve the resist pattern, the method eliminates the source of intermixing while preserving the insulating material structure that was formed using the resist as a template, thus resolving the contradiction between achieving fine patterns and maintaining insulating properties
Solution Approach 2:
The invention introduces an alkali solution as an intermediary substance that selectively removes the resist pattern without affecting the insulating material. This mediator enables the separation of the resist pattern from the insulating structure, preventing intermixing while maintaining the precision of the formed pattern
2Manufacturing precision
If conventional lithographic techniques are used, then patterns can be transferred, but the process becomes complex and time-consuming
Solution Approach 1:
The invention merges the pattern formation and insulation material deposition steps into a single integrated process. By forming the insulating material directly on the resist pattern and then removing the resist, the method combines multiple conventional steps (lithography, etching, deposition) into a streamlined sequence, reducing overall process time while maintaining pattern transfer precision
Solution Approach 2:
The invention inverts the conventional approach by forming the insulating material structure first using the resist as a mold, then removing the resist to create the final pattern. This reverse sequence eliminates the need for complex etching steps required in conventional methods, significantly reducing process time while achieving the same pattern transfer result
3Manufacturing precision
If organic patterns are used as molds, then insulating material can be formed, but removal of organic patterns causes intermixing
Solution Approach 1:
The invention treats the resist pattern as a disposable temporary mold that is intentionally designed to be removed after serving its function. By selecting resist materials that are easily soluble in alkali solutions and using them only for the purpose of forming the insulating material structure, the method enables clean separation without intermixing, as the resist is completely dissolved away after creating the desired insulating pattern
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the convenient formation of multilayer structures without complex etching, prevents intermixing with resist patterns, and achieves excellent insulating properties and dry etching resistance, making it suitable for the damascene process.
Implementation Method 1
The polysiloxane is obtained by hydrolysis and condensation of a hydrolysable silane compound
Implementation Method 2
The polysiloxane is obtained by hydrolysis and condensation of a hydrolysable silane compound
Data Source
AI summary
An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.