Inverted Majority Current Assisted Detector for Low Power
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Solution Overview
Problem
Conventional Current-Assisted Photonic Demodulators (CAPDs) face challenges in reducing power consumption while maintaining high demodulation speed and miniaturizing pixel size, leading to increased power consumption and difficulties in shrinking pixel pitch.
Innovation Solution
The semiconductor layer is lightly doped with a dopant of the first conductivity type, with detection regions surrounding the control regions, and a semiconductor region providing strong insulation between detection regions, allowing for reduced pixel size and power consumption without compromising demodulation speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional CAPD structures are used with control regions surrounding detection regions, then demodulation speed can be maintained, but power consumption increases and pixel size cannot be reduced
Solution Approach 1:
The patent inverts the conventional CAPD structure by placing control regions inside detection regions rather than surrounding them. This inversion allows the detection regions to be smaller while maintaining the necessary electrical field for demodulation, thereby reducing overall pixel size and power consumption without compromising demodulation speed
Solution Approach 2:
The patent changes the electrical parameters by applying positive potential to control regions during first demodulation phases and negative potential during second demodulation phases. This dynamic parameter change enables efficient carrier collection in the inverted structure, maintaining high demodulation speed while reducing the physical size requirements
2Area of moving object
If pixel size is reduced to increase pixel density, then imaging resolution improves, but power consumption increases due to higher current density
Solution Approach 1:
By inverting the control region placement inside detection regions, the patent enables more efficient use of the available pixel area. This allows smaller pixel sizes with lower current density requirements, as the inverted structure creates more effective electrical field distribution for carrier collection, thereby reducing power consumption even at reduced pixel dimensions
3Length of moving object
If control regions surround detection regions in conventional CAPD, then electrical field distribution is optimized for carrier collection, but pixel pitch cannot be reduced
Solution Approach 1:
The inverted structure with control regions inside detection regions maintains effective carrier collection by creating concentrated electrical fields at the control region locations. This inversion allows tighter pixel pitch because the control regions are embedded within the detection region area rather than occupying peripheral space, enabling smaller pixel dimensions without sacrificing collection efficiency
Solution Approach 2:
The patent applies local quality by creating highly localized electrical fields within the detection regions where control regions are positioned. This localized field concentration ensures efficient carrier collection in specific areas while allowing the overall pixel structure to be compact, thereby enabling reduced pixel pitch without compromising reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces power consumption and enables further pixel miniaturization while maintaining high demodulation speed, allowing for efficient depth perception in imaging applications.
Implementation Method 1
photogenerated minority carriers are directed towards a detection region under the influence of an electrical field generated between the control regions
Implementation Method 2
When a pixel comprises several taps and when a positive potential is applied to a tap with respect to the other taps, this tap is activated and will be receiving the majority of the photogenerated minority carriers in the pixel
Implementation Method 3
The electron-hole pair will be separated by an electrical field that is present and that is associated with the flowing majority current
Implementation Method 4
When a photon is incident within the photosentitive area of a pixel, an electron-hole e−/h+ pair may be generated at a certain position
Data Source
AI summary
The invention relates to a majority current assisted detector device, comprising a semiconductor layer of a first conductivity type epitaxially grown on a semiconductor substrate, at least two control regions of the first conductivity type, at least two detection regions of a second conductivity type opposite to the first conductivity type, and a source for generating a majority carrier current in the semiconductor layer between the two control regions, the majority current being associated with an electrical field. The detection regions surround the control regions, thereby forming at least two taps. The device is configured for backside illumination and further comprises a well of the first conductivity type between the two detection regions for insulating the detection regions. The well comprises pixel circuitry elements.