Inverted-T FinFET Lateral Extension for Current Drive
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing FinFET technologies face challenges in adjusting current drive without increasing fin height, as current drive adjustments are typically limited to increments of fin height, requiring additional space and lithography pitch limitations.
Innovation Solution
The introduction of a lateral extension to the FinFET channel, defined by a sidewall spacer, allows for adjustable current drive without incrementing fin height, using conventional sidewall formation techniques to vary the width of the lateral extension from 50 to 1000 Angstroms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If fin height is increased to increase channel width and current drive, then current drive is improved, but device area and manufacturing complexity increase
Solution Approach 1:
The patent introduces a lateral extension dimension to the traditional vertical fin structure. By extending the channel laterally from the fin base along the substrate surface, the invention adds a new dimensional approach to increasing channel width without increasing fin height. This lateral extension is controlled by sidewall spacers and allows continuous adjustment of channel width independent of the discrete fin height increments.
2Power
If multiple fins are used to increase channel width, then current drive is improved, but device area and lithography pitch requirements increase
Solution Approach 1:
The channel is segmented into two distinct components: the vertical fin portion and the lateral extension portion. This segmentation allows independent optimization and control of each component. The lateral extension can be adjusted separately from the fin structure using sidewall spacer thickness, enabling fine-tuning of channel width without adding entire fin structures.
Solution Approach 2:
The invention makes the channel width dynamically adjustable through the sidewall spacer thickness parameter. By varying the spacer thickness, the lateral extension width can be continuously adjusted, providing a dynamic means to optimize current drive for different circuit requirements without fabricating multiple discrete fin configurations.
3Power
If fin height is increased to increase channel width, then current drive is improved, but manufacturing difficulty increases
Solution Approach 1:
Sidewall spacers are introduced as intermediary structures that mediate between the fin formation process and the final channel width definition. These spacers serve as masks during the lateral extension etch process, enabling precise control of channel width without requiring direct lithographic patterning of the channel edges. This intermediary approach simplifies manufacturing by using self-aligned spacer formation rather than complex direct patterning.
Data Source
AI summary
A method for creating an inverse T field effect transistor is provided. The method includes creating a horizontal active region and a vertical active region on a substrate. The method further comprises forming a sidewall spacer on a first side of the vertical active region and a second side of the vertical active region. The method further includes removing a portion of the horizontal active region, which is not covered by the sidewall spacer. The method further includes removing the sidewall spacer. The method further includes forming a gate dielectric over at least a first part of the horizontal active region and at least a first part of the vertical active region. The method further includes forming a gate electrode over the gate dielectric. The method further includes forming a source region and a drain region over at least a second part of the horizontal active region and at least a second part of the vertical active region.