Inverted T-Shaped Insulating Gate Separation Structure for Transistor Devices

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Solution Overview

Problem

As device dimensions decrease and packing densities of transistor devices increase, the aspect ratio of sacrificial gate structures in integrated circuits becomes higher, making the cutting of sacrificial gate structures into individual segments more problematic, leading to incomplete removal and residual material that can affect device performance or cause failure.

Innovation Solution

A novel method involving the formation of a sacrificial gate structure with a multi-layer sacrificial gate electrode structure, where portions of the sacrificial gate electrode material layers are selectively removed to create openings for an insulating gate separation structure, allowing for the formation of replacement gate structures with an inverted T-shaped cross-sectional configuration, which facilitates complete removal of sacrificial materials and improves device performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device dimensions are decreased and packing density is increased, then transistor integration is improved, but the aspect ratio of sacrificial gate structures becomes higher making cutting more problematic

Engineering Contradiction:

Improvetransistor integrationVSAvoidcutting of sacrificial gate structures

Core Design Contradiction:

ProductivityVSEase of manufacture

Solution Approach 1:

The sacrificial gate structure is divided into multiple segments with gaps between them, allowing each segment to be independently removed. This segmentation enables complete removal of sacrificial materials even in high-aspect-ratio structures by providing access points at multiple locations rather than attempting to remove a single continuous structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The sacrificial gate structure is pre-patterned with gaps and divided into segments before final removal. This preliminary segmentation facilitates subsequent complete removal by allowing etch solutions to access and remove sacrificial material from multiple points, solving the problem of incomplete removal in high-aspect-ratio structures.

Inventive Principle:

Principle #10Preliminary action

2Ease of manufacture

If sacrificial gate structures are cut into individual segments, then removal is facilitated, but residual material may remain affecting device performance

Engineering Contradiction:

Improveremoval of sacrificial gate structuresVSAvoiddevice performance

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The sacrificial gate structure is divided into multiple discrete segments with gaps between them. This segmentation allows etch solutions to access and completely remove sacrificial material from each segment independently, eliminating residual material that would remain if a continuous structure were used.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The gaps between sacrificial gate segments serve as intermediary spaces that allow etch solutions to penetrate and completely remove sacrificial material. These gaps act as access channels that enable complete removal without leaving residual material, thereby ensuring device reliability.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Device complexity

If continuous line-type sacrificial gate structures are used, then manufacturing is simpler, but complete removal becomes difficult due to high aspect ratio

Engineering Contradiction:

Improvesacrificial gate structure formationVSAvoidcomplete removal of sacrificial materials

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

Instead of forming a single continuous sacrificial gate structure, the method divides it into multiple segments with gaps. This segmentation maintains manufacturing simplicity while enabling complete removal, as the gaps provide access points for etch solutions to reach and remove all sacrificial material even in high-aspect-ratio configurations.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The sacrificial gate structure includes additional gaps beyond the minimum needed for removal. This excessive segmentation ensures that etch solutions can completely remove all sacrificial material by providing multiple access points, guaranteeing complete removal without requiring complex processing.

Inventive Principle:

Principle #16Partial or excessive action

Data Source

PatentUS11349013B2IC product comprising a novel insulating gate separation structure for transistor devices

Publication Date: 2022.05.31 GLOBALFOUNDRIES US INC

AI summary

One illustrative integrated circuit product disclosed herein includes a first final gate structure having a first end surface and a second final gate structure having a second end surface. In this embodiment, the integrated circuit product also includes an insulating gate separation structure positioned between the first and second final gate structures, wherein the first end surface contacts a first side surface of the insulating gate separation structure and the second end surface contacts a second side surface of the insulating gate separation structure. In this embodiment, the insulating gate separation structure has an inverted T-shaped cross-sectional configuration in at least one direction.