EV Inverter Power Module Trench Layout for Thermal Isolation
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Solution Overview
Problem
Inverters for electric vehicles face challenges with heat generation and thermal management due to incorrect layout and design, leading to potential overheating and reduced efficiency, and existing materials and components restrict design flexibility and increase costs.
Innovation Solution
A power module design featuring a trench in the metallization layer of the substrate, allowing for a thinner sinter element thickness of 25-50 μm, which reduces thermal resistance and enables proper flow of overmolding material, while maintaining high voltage isolation and thermal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thicker sinter element is used to ensure high voltage isolation, then electrical insulation is improved, but thermal resistance increases and assembly flexibility is reduced
Solution Approach 1:
The patent introduces a vertical trench structure in the metallization layer to provide electrical isolation in the vertical dimension, enabling the sinter element thickness to be reduced from traditional 75 μm to 25-50 μm while maintaining 1200V isolation capability. The trench creates physical separation between high voltage planes without requiring increased material thickness.
Solution Approach 2:
The patent changes the physical structure of the metallization layer by adding a trench with specific dimensions (depth, width, and positioning), which fundamentally alters how electrical isolation is achieved. This structural parameter change allows the sinter element thickness parameter to be optimized for thermal performance rather than being constrained by isolation requirements.
2Ease of manufacture
If a thicker sinter element is used for proper material flow during assembly, then manufacturing reliability is improved, but thermal performance deteriorates
Solution Approach 1:
The trench structure provides the necessary vertical clearance and flow path for overmolding material to properly fill and encapsulate the assembly. This dimensional feature ensures complete material flow and void-free assembly without requiring a thick sinter element, thereby enabling thin sinter elements (25-50 μm) to be used while maintaining manufacturing reliability.
3Device complexity
If traditional power module layout is used, then design simplicity is maintained, but thermal management performance is insufficient
Solution Approach 1:
The patent applies local quality by introducing a trench specifically in the metallization layer region where electrical isolation is needed, rather than redesigning the entire power module layout. This localized structural modification enables improved thermal management through thinner sinter elements while maintaining the overall simplicity of the power module architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances thermal performance, reduces costs, and maintains high voltage isolation, allowing for flexible sinter element sizing and improved assembly efficiency in power modules for electric vehicle inverters.
Implementation Method 1
a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate
Implementation Method 2
the source plane and a gate plane separated from the source plane by a full trench
Data Source
AI summary
A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a flex layer including a gate trace providing an electrical connection to a gate input connection of the power module, a first substrate, a second substrate including a source plane, the source plane including a step trench, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to at an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate trace, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery configured to supply the DC power to the inverter; and a motor configured to receive the AC power from the inverter.