In-Zn-Sn Oxide Semiconductor Layer for Thin-Film Transistors

The patent applies parameter changes by precisely controlling the atomic composition ratios of In, Zn, and Sn in the IZTO semiconductor layer. By optimizing these compositional parameters within specific ranges, the patent achieves both high electronic carrier concentration and good switching properties, resolving the contradiction between quantity of charge carriers and device reliability.

The patent resolves this contradiction by optimizing sputtering process parameters including oxygen partial pressure, sputtering power, and gas flow rates. By carefully controlling these parameters, the patent achieves low-temperature film formation while maintaining acceptable sputtering rates, allowing both low temperature processing and reasonable productivity.

The patent applies local quality by optimizing the local composition of the IZTO film, particularly controlling the Sn content and distribution. By adjusting the compositional quality of the semiconductor layer, the patent improves etch selectivity and reduces residue formation during wet etching, while maintaining the desired patterning capability.

The patent resolves this contradiction by precisely controlling the In content parameter within a specific range and balancing it with Zn and Sn contents. By optimizing this compositional parameter, the patent maintains high carrier mobility while preventing excessive negative threshold voltage, ensuring stable transistor characteristics.