Iodic Acid Etching Composition for Ruthenium Residue Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current compositions used in semiconductor manufacturing exhibit insufficient dissolving ability for ruthenium-containing substances, necessitating the development of a more effective etchant for removing transition metal impurities from substrates.
Innovation Solution
A composition comprising iodic acid compounds and specific ammonium salts, with a chloride ion content and pH optimization, is formulated to enhance the dissolving ability for ruthenium-containing substances, allowing for efficient removal from substrates through various treatment steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching compositions are used, then the manufacturing process is simple, but the dissolving ability for ruthenium-containing substances is insufficient
Solution Approach 1:
The patent employs a composite etching composition containing periodic acid (or iodic acid) combined with specific quaternary ammonium salts (such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, or their mixtures). This composite formulation synergistically enhances the dissolving ability for ruthenium-containing substances while maintaining processability, directly resolving the contradiction between effectiveness and complexity.
Solution Approach 2:
The patent optimizes specific parameters including the concentration ratios of periodic acid to quaternary ammonium salts, pH values (maintained alkaline), and temperature conditions. By carefully controlling these parameters, the composition achieves superior ruthenium dissolution capability without requiring overly complex formulation or processing conditions.
2Manufacturing precision
If the composition is optimized for ruthenium dissolution, then metal residue removability improves, but the formulation becomes more complex
Solution Approach 1:
The patent achieves high metal residue removability by optimizing critical parameters: maintaining alkaline pH conditions, controlling the concentration ratio of periodic acid to quaternary ammonium salts within specific ranges, and regulating treatment temperatures. These parameter optimizations enable effective ruthenium removal while keeping the formulation relatively simple and manageable.
Solution Approach 2:
The patent utilizes periodic acid (or iodic acid) as a strong oxidizing agent that accelerates the dissolution of ruthenium-containing substances. This strong oxidation mechanism significantly enhances metal residue removability while maintaining a relatively straightforward composition formulation, effectively resolving the contradiction between precision and complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition demonstrates improved dissolving ability and metal residue removability, effectively removing ruthenium-containing substances from substrates, enhancing the efficiency of semiconductor manufacturing processes.
Implementation Method 1
A composition containing at least one iodic acid compound selected from the group consisting of periodic acid, iodic acid, and salts thereof
Data Source
AI summary
Objects of the present invention are to provide a composition having excellent dissolving ability for a transition metal-containing substance (particularly, a Ru-containing substance) and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one iodic acid compound selected from the group consisting of periodic acid, iodic acid, and salts thereof, and a compound represented by Formula (1).