Iodized Nitroxyl Radical Quencher for Resist LWR Reduction
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Solution Overview
Problem
Current resist compositions face challenges in achieving high sensitivity and reduced line width roughness (LWR) and critical dimension uniformity (CDU) due to issues with acid diffusion and radical diffusion during exposure, especially as pattern feature sizes approach the diffraction limit of light, leading to reduced resolution and focus margin.
Innovation Solution
Incorporating a nitroxyl radical with an iodine-substituted aromatic ring as a quencher in the resist composition to suppress both acid and radical diffusion, thereby improving contrast, resolution, and process margin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional quenchers (amine compounds) are used to control acid diffusion, then acid diffusion is suppressed to some extent, but the contrast improvement effect is faint and molecular weight increase is insufficient
Solution Approach 1:
The patent changes the molecular weight parameter of the quencher by introducing a fluorinated aromatic ring structure. This increases the molecular weight from conventional amine quenchers to 200-500 Da, thereby enhancing the acid diffusion control ability and achieving superior contrast improvement effects.
Solution Approach 2:
The patent creates a composite quencher structure combining fluorinated aromatic rings with amine groups. This composite structure integrates the high molecular weight benefit of fluorinated aromatics with the acid-base interaction capability of amine groups, achieving both enhanced contrast and reliable acid diffusion control.
2Adaptability or versatility
If resist film thickness is increased to accommodate thicker resist films for 3D-NAND, then manufacturing capability is improved, but light contrast lowers and resolution reduces
Solution Approach 1:
The patent changes the optical and chemical parameters of the resist system by introducing a high-absorption quencher. This allows maintaining thinner resist films (improving light contrast) while achieving the necessary acid diffusion control for thick-film applications like 3D-NAND, thus resolving the thickness-resolution contradiction.
Solution Approach 2:
The fluorinated aromatic amine quencher acts as an intermediary that mediates between the conflicting requirements of thin-film light transmission and thick-film acid control. It provides strong acid diffusion control enabling thin-film operation while maintaining compatibility with thick-film process requirements.
3Productivity
If pattern feature size is reduced approaching diffraction limit, then integration density is increased, but light contrast lowers and focus margin reduces
Solution Approach 1:
The patent changes the chemical parameters of the resist system by introducing a high-absorption quencher with specific optical properties. This enhances the effective light contrast at the pattern interface, thereby maintaining focus margin and resolution even as pattern feature sizes are reduced to increase integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of the iodized aromatic ring-containing nitroxyl radical effectively reduces acid and radical diffusion, resulting in a resist composition with high sensitivity, low LWR, and improved CDU, enhancing the overall performance of the resist material.
Implementation Method 1
suppress both acid and radical diffusion
Data Source
AI summary
A resist composition comprising a quencher containing a nitroxyl radical having an iodized aromatic ring is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.