Ion Beam Deposition via Secondary Electron Neutralization
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Solution Overview
Problem
Conventional vacuum-based deposition methods face challenges such as the need for expensive and toxic metalorganic precursors, contamination from gallium ions in FIB systems, and lower deposition rates with electron beams, which limit the deposition of desired materials without contamination.
Innovation Solution
A method involving an ion source coupled with a vacuum system where positive ions are directed towards a sample, neutralized by secondary electrons generated by a primary electron or ion beam, allowing for patterned deposition without the need for hazardous precursors and minimizing contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional vacuum-based deposition methods are used, then materials can be deposited on substrates, but expensive and toxic metalorganic precursors are required
Solution Approach 1:
The invention extracts and eliminates the need for toxic metalorganic precursors by using a direct ion beam deposition method. The precursor material is removed from the process entirely, replaced by atomic layer ion beams that deposit material without requiring hazardous chemical compounds.
Solution Approach 2:
The invention replaces expensive, toxic metalorganic precursors with inexpensive, inert gas ions (such as xenon or argon). These gas ions serve as the deposition source and can be easily introduced and removed from the vacuum system without contamination concerns.
2Manufacturing precision
If FIB systems are used for deposition, then patterned deposition can be achieved, but contamination from gallium ions occurs
Solution Approach 1:
The invention extracts and removes gallium ions from the deposition process. Instead of using gallium ion beams that cause contamination, the system uses inert gas ions that do not interact chemically with the substrate or deposited material, thereby eliminating contamination while maintaining patterned deposition capability.
Solution Approach 2:
The invention copies the functional capability of gallium ion beam deposition (patterned material deposition) but uses a different physical mechanism - inert gas ion physical vapor deposition instead of gallium ion chemical vapor deposition. This achieves the same patterning function without the harmful chemical interactions.
3Adaptability or versatility
If electron beams are used for deposition, then deposition can be performed, but deposition rates are lower
Solution Approach 1:
The invention substitutes the electron beam mechanism with an ion beam mechanism. Ion beams transfer momentum and energy more efficiently to the deposited atoms, resulting in higher deposition rates compared to electron beam methods, while maintaining the ability to deposit a wide variety of materials.
Solution Approach 2:
The invention changes the fundamental parameter of the incident particle from electrons to ions. This parameter change increases the mass and energy transfer efficiency, directly increasing the deposition rate while preserving the versatility of material deposition through control of ion beam parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient deposition of a wide variety of materials with reduced contamination, using either ion or electron beams, by neutralizing ions with secondary electrons, thus overcoming the limitations of conventional methods.
Implementation Method 1
A method involving an ion source coupled with a vacuum system where positive ions are directed towards a sample, neutralized by secondary electrons generated by a primary electron or ion beam
Implementation Method 2
enables efficient deposition of a wide variety of materials with reduced contamination, using either ion or electron beams
Data Source
AI summary
A method of creating a localized deposition on a sample in a vacuum chamber having an ion source generating a positively-charged beam of ions and a separate source of primary radiation generating a beam of radiation. An ion beam from the ion source is directed toward the sample, and the primary radiation beam is applied to the sample to generate emitted electrons from the sample. The ion beam and the primary radiation beam are positioned so that the paths of at least some of the ions in the ion beam and the paths of at least some of the emitted electrons from the sample substantially overlap in space near the sample surface. The energy of the ions in the ion beam and the electric potential of the sample are adjusted to substantially prevent deposition of ions on the sample. The energy of the ions in the ion beam and the electric potential of the sample are adjusted so that a portion of the ions in the ion beam are neutralized by the emitted electrons from the sample, and such neutralized ions continue in their respective paths to deposit on the sample.