Microstructured Ion Beam Energy Filtering for Precise Implant Depth
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing ion implantation systems for modifying material properties are complex, costly, and have large space requirements, with complex adjustments needed for ion energy, which can be difficult to reproduce.
Innovation Solution
A compact device for particle implantation using a microstructured membrane energy filter and passive braking elements, allowing for precise energy adjustment of the ion beam and reducing manufacturing costs and dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If complex high-energy accelerators are used for ion implantation, then the required primary energy of above 500 keV can be achieved, but the device becomes very complex and requires a lot of space
Solution Approach 1:
The energy filtering function is segmented into multiple independent thin-film energy filters arranged in series. Each filter contributes a specific energy loss, and by combining multiple filters, the total energy reduction can be precisely controlled. This segmentation allows the system to achieve complex energy filtering without requiring a single complex high-energy accelerator configuration.
Solution Approach 2:
The system changes the energy parameter of the ion beam by passing it through multiple energy filters with different thicknesses and materials. Each filter causes a specific energy loss based on its physical properties, allowing precise control of the final ion beam energy without complex accelerator adjustments. The energy filter arrangement enables reproducible energy settings by simply changing which filters are in the beam path.
2Use of energy by moving object
If complex high-energy accelerators are used for ion implantation, then the required primary energy of above 500 keV can be achieved, but the space requirements and construction costs increase
Solution Approach 1:
The patent replaces the mechanical/physical complexity of high-energy accelerator systems with a simpler system based on thin-film energy filters. Instead of using complex high-voltage acceleration mechanisms and large accelerator structures, the system uses deposited thin films whose energy loss properties are determined by their thickness and material composition. This substitution dramatically reduces the space and construction costs while maintaining the ability to achieve the required ion beam energies.
3Manufacturing precision
If energy filters are used to adjust dopant depth profiles, then predefined depth profiles can be achieved, but the facility remains complex and costly
Solution Approach 1:
The system achieves precise doping depth profiles by changing the energy parameter of the ion beam through selection of specific thin-film energy filters. Each filter configuration corresponds to a specific energy loss, which directly determines the implantation depth. This parameter-based control method simplifies the facility while maintaining manufacturing precision, as the depth profile is controlled by selecting filters with appropriate thickness and material properties rather than complex accelerator adjustments.
Solution Approach 2:
The patent creates a simplified copy or alternative implementation of the energy filtering function using thin-film deposits on substrates. Instead of relying on complex accelerator-based energy selection systems, the invention copies the energy filtering effect through carefully designed thin-film structures that can be produced using standard thin-film deposition techniques. This copying approach maintains the functional capability while dramatically reducing facility complexity and cost.
4Measurement precision
If multiple energy filters are used for precise energy adjustment, then desired energy can be achieved, but the power dissipation in filters increases
Solution Approach 1:
The energy filtering is segmented across multiple thin-film filters rather than using a single thick filter. This segmentation distributes the total energy loss across several thinner films, allowing the ion beam to pass through with reduced peak power density at any single location. The segmented approach maintains precise energy control while managing heat dissipation more effectively.
Solution Approach 2:
The system dynamically selects which energy filters are placed in the ion beam path based on the desired energy setting. Rather than having all filters in the path simultaneously, the system can exchange or reposition filters to match the required energy reduction. This dynamic configuration optimizes the energy dissipation by ensuring that the necessary filtering is achieved with minimal total power loss in the filter system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise and reliable energy setting of the ion beam, reducing manufacturing costs and dimensions, and improving reproducibility and reliability of the ion implantation process.
Implementation Method 1
a particle accelerator (4) for generating an ion beam (10) of positively charged ions
Implementation Method 2
at least one passive deceleration element (22) for the ion beam (10), which is arranged between the particle accelerator (4) and the substrate holder (30) and spaced from the energy filter (20)
Implementation Method 3
an energy filter (20) arranged between the particle accelerator (4) and the substrate holder (30), wherein the energy filter (20) is a microstructured membrane with a predefined structural profile for adjusting a dopant depth profile and/or defect depth profile in the substrate (12)
Data Source
Figure 1
Figure 2
Figure 3(a)~3(d)
AI summary
The device for implanting particles into a substrate (12) comprises a particle source (2) and a particle accelerator (4) for producing an ion beam (10) consisting of positively-charged ions. The device also comprises a substrate mount (30) and an energy filter (20) positioned between the particle accelerator (4) and the substrate mount (30). The energy filter (20) is a micro-structured membrane with a pre-defined structural profile for setting, in the substrate (12), a dopant depth profile and/or defect-depth profile brought about by the implantation process. The device also has a passive deceleration element (22) for the ion beam (10), said element being positioned between the particle accelerator (4) and the substrate mount (30) and spaced apart from the energy filter (20).