Ion Beam Etching Without Substrate Rotation
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Solution Overview
Problem
Conventional ion beam etching processes require substrate rotation and tilting to achieve uniform ion flux and control ion incidence angle, which complicates the etching apparatus and introduces processing difficulties such as mechanical and electrical connection issues, and limits the ability to deliver reactants uniformly.
Innovation Solution
An ion beam etching apparatus and method that uses divergent ion beams, off-center aperture electrodes, electromagnetic coils, and deflection plates to control ion beam trajectories and orientation without substrate rotation or tilting, allowing for uniform ion flux and reactant delivery at high local pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrate rotation and tilting are used to achieve uniform ion flux and control ion incidence angle, then etching uniformity and ion beam control are improved, but apparatus complexity and mechanical connection issues worsen
Solution Approach 1:
Instead of rotating and tilting the substrate to control ion beam incidence, the patent inverts the approach by rotating and tilting the ion beam source itself. The ion beam source is rotated about the substrate normal and tilted relative to the substrate, delivering ions at controlled non-normal incidence angles without requiring substrate rotation or tilting mechanisms.
Solution Approach 2:
The patent replaces the mechanical substrate rotation and tilting system with an electromagnetic field-based ion beam steering system. By controlling the ion beam source orientation and using electromagnetic fields to guide the ion beams, the system achieves uniform ion flux distribution and controlled incidence angles without mechanical substrate movement, eliminating associated mechanical and electrical connection issues.
2Manufacturing precision
If substrate rotation is used to achieve uniform ion coverage, then etching uniformity is improved, but mechanical connection issues and processing difficulties worsen
Solution Approach 1:
The patent inverts the conventional approach by keeping the substrate stationary and instead rotating the ion beam source about the substrate normal. This rotation of the ion source, combined with tilting, delivers ions at controlled non-normal incidence angles across the substrate surface, achieving uniform coverage without mechanical substrate rotation and its associated processing difficulties.
3Manufacturing precision
If conventional ion beam etching with substrate tilting is used to control ion incidence angle, then etching profile control is improved, but apparatus complexity and reactant delivery uniformity worsen
Solution Approach 1:
The patent inverts the conventional approach by tilting the ion beam source relative to the substrate rather than tilting the substrate. The ion beam source is positioned at a tilt angle and rotated about the substrate normal, which delivers ions at controlled non-normal incidence angles, enabling etching profile control without substrate tilting mechanisms.
Solution Approach 2:
The ion beam source in the patent performs multiple functions: it generates ions, controls ion beam direction, adjusts incidence angles, and distributes ions uniformly across the substrate. By integrating these functions into a single tiltable and rotatable ion source assembly, the patent reduces overall apparatus complexity while maintaining precise etching profile control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the etching process, reduces apparatus complexity, and ensures uniform ion coverage and reactant distribution across the substrate surface, improving etching uniformity and throughput without the need for substrate rotation or tilting.
Implementation Method 1
a plasma region for generating and/or maintaining a plasma
Implementation Method 2
an ion extractor positioned proximate the plasma region, the ion extractor including: a first electrode, a second electrode, and an optional third electrode... a power supply configured to supply a bias potential to one or more of the first electrode, second electrode, and third electrode
Implementation Method 3
one or more electromagnetic coils may be used in achieving (a) and/or (b). In some examples, the apparatus further includes one or more electromagnetic coils positioned outside the reaction chamber to generate a magnetic field in a region between the ion source and the substrate support
Implementation Method 4
the instructions in (b) include instructions to vary the strength of the magnetic field to thereby move the ion beams with respect to the orientation of the ion source and substrate surface
Data Source
AI summary
Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.