Ion Beam Extraction Plate for Selective Carbon Film Deposition
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Solution Overview
Problem
The challenge in processing small features of integrated devices, such as three-dimensional devices like multigate transistors, is the difficulty in masking target portions, particularly for self-aligned doping processes like those in finFETs, where selective deposition of coatings is required.
Innovation Solution
A system and method for selectively depositing a carbon layer on a substrate using a plasma chamber with a power source to generate a plasma from a carbon-containing gas, an extraction plate to direct an ion beam with non-zero angle incidence, and a substrate heater, allowing for differential deposition rates on exposed and unexposed regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If physical masking or lithography is used to select portions of the substrate, then deposition selectivity is achieved, but device complexity and processing difficulty increase
Solution Approach 1:
The patent replaces physical masking mechanisms with an ion beam extraction system that uses electric fields to selectively direct ions to specific substrate regions. The extraction plate with controlled voltage creates an ion beam that can be precisely directed without mechanical masks, reducing device complexity while maintaining deposition selectivity.
Solution Approach 2:
The patent utilizes changes in ion beam parameters (angle of incidence, energy, direction) to achieve selective deposition. By controlling the extraction plate voltage and ion beam angle, the system can selectively deposit carbon layers on specific regions of the substrate without physical masking, thereby reducing complexity while maintaining precision.
2Productivity
If ion beam is extracted at normal incidence, then deposition rate is maximized, but selectivity over different substrate regions is reduced
Solution Approach 1:
The patent applies local quality by varying the ion beam angle of incidence across different substrate regions. The extraction plate configuration creates different ion beam angles for different areas, allowing each region to receive optimized ion beam parameters for its specific deposition requirements, thereby achieving both high deposition rate and precise profile control.
Solution Approach 2:
The patent introduces the dimension of ion beam angle of incidence to control deposition profiles. Instead of only controlling deposition through normal incidence, the system utilizes angular variation as an additional control parameter, enabling precise control over carbon layer thickness and distribution across different substrate regions while maintaining high deposition rates.
3Productivity
If substrate is heated to high temperature, then deposition rate increases, but control over deposition profile becomes more difficult
Solution Approach 1:
The patent applies preliminary action by pre-heating the substrate to a controlled temperature before ion beam irradiation. This preliminary thermal preparation optimizes the substrate surface for deposition while the ion beam parameters are independently controlled to maintain precise deposition profiles. The heating element is positioned to provide uniform heating without affecting ion beam directionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables tailored deposition profiles by controlling the ion beam trajectories and substrate temperature, enhancing deposition rates on targeted regions while minimizing deposition on unexposed areas, facilitating precise coating applications without physical masking or lithography.
Implementation Method 1
a power source to generate a plasma containing the carbon-containing gas in the plasma chamber
Implementation Method 2
an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence
Implementation Method 3
a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate
Implementation Method 4
selective deposition of carbon layers at varying rates on different substrate regions
Data Source
AI summary
In one embodiment, an apparatus to selectively deposit a carbon layer on substrate, comprising a plasma chamber to receive a flow of carbon-containing gas; a power source to generate a plasma containing the carbon-containing gas in the plasma chamber; an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the extraction plate further configured to conduct a neutral species derived from the carbon-containing gas to the substrate; and a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate.