Microstructured Energy Filter Frame for Ion Beam Profile Control
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Solution Overview
Problem
Current ion implantation technologies face challenges in producing complex dopant depth profiles with high throughput, ease of filter replacement, and achieving high lateral homogeneity, particularly in semiconductor materials like silicon carbide, due to limitations in filter design, handling, and cooling systems.
Innovation Solution
The implementation of a microstructured energy filter with a filter frame that allows for easy handling and cooling, combined with a multifilter concept and sacrificial layers, enables the production of complex dopant profiles with high throughput and improved lateral homogeneity by modifying the ion beam's energy distribution and using sacrificial layers to adjust the implantation profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a microstructured energy filter is used to produce complex dopant depth profiles, then manufacturing precision and versatility are improved, but filter handling and replacement become more difficult
Solution Approach 1:
The filter system is divided into modular filter elements that can be independently handled and replaced. Each filter element contains specific microstructures designed for particular dopant profiles, allowing selective replacement without handling the entire filter assembly, thus maintaining precision while improving ease of operation.
Solution Approach 2:
The filter design incorporates universal mounting interfaces and standardized holder structures that accommodate different filter elements. This multi-functional approach allows the same holder mechanism to handle various filter types, simplifying replacement procedures while maintaining the ability to produce complex dopant profiles through different filter configurations.
2Productivity
If high ion beam current is used to increase throughput, then productivity is improved, but filter heating and cooling requirements become more stringent
Solution Approach 1:
The cooling system is designed with dynamic temperature control capabilities that adjust cooling intensity based on real-time filter temperature monitoring. This allows the system to maintain optimal filter temperature even under high ion beam currents, enabling increased throughput without compromising filter integrity or requiring excessive cooling infrastructure.
Solution Approach 2:
The system employs variable cooling parameters including adjustable coolant flow rates and temperatures. By dynamically changing these thermal parameters in response to beam current levels, the system can handle high-current operation for increased productivity while maintaining filter temperature within safe operating limits.
3Manufacturing precision
If complex microstructured filters are implemented to achieve precise dopant profiles, then manufacturing precision is improved, but device complexity and cost increase
Solution Approach 1:
Complex dopant profiling capabilities are achieved by segmenting the filter into multiple simpler microstructured elements rather than using a single complex structure. Each element can be manufactured with standard precision techniques, reducing individual element complexity while the combination provides the overall complex doping profile capability, thus improving precision without proportionally increasing device complexity.
4Ease of operation
If filter replacement is simplified for ease of operation, then ease of operation is improved, but filtering precision and reliability may be compromised
Solution Approach 1:
Filter elements are pre-configured with precise microstructures and pre-assembled in modular units with integrated mounting features. This preliminary preparation ensures that when filters are quickly replaced, the precision-critical microstructures are already in their correct positions and orientations, maintaining dopant profile accuracy while enabling simple replacement procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient production of complex dopant profiles with high throughput and improved lateral homogeneity, facilitating the use of energy filters in industrial semiconductor production by simplifying filter replacement and cooling, and enabling precise control over dopant distribution.
Implementation Method 1
the filter is irradiated by the ion beam passing through the filter to the wafer
Implementation Method 2
By means of ion implantation, it is possible to achieve the doping or production of defect profiles, in any desired material such as semiconductor material
Data Source
AI summary
A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.