Multi-Zone Ion Beam Grid for Uniform Lateral Etching
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Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving uniform lateral etching across semiconductor substrates during the elongation process, as ion beams and plasmas striking at tilted angles result in non-uniform irradiation, leading to inconsistent etching rates and reduced yield and reliability of integrated circuits.
Innovation Solution
A dry etching apparatus with a multi-zone grid structure and adjustable shutter and chuck movements to equalize radiant exposure across the substrate, using a spatial-dependent irradiance and exposure time adjustment to ensure uniform etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ion beams and plasmas strike at tilted angles during the elongation process, then lateral etching can be performed to increase device density, but non-uniform irradiation results causing inconsistent etching rates across the substrate
Solution Approach 1:
The patent applies local quality by dividing the grid structure into multiple zones with different electrical potentials. Each zone independently adjusts the irradiance of ion beams and plasmas striking at tilted angles, ensuring that different regions of the substrate receive appropriate local irradiation conditions. This resolves the contradiction by maintaining lateral etching capability while achieving uniform etching rates across the entire substrate surface through localized irradiance control.
2Ease of manufacture
If the substrate is tilted to receive ion beams at angled incidence, then elongation etching can be achieved, but non-uniform radiant exposure results across different portions of the substrate
Solution Approach 1:
The patent employs parameter changes by dynamically adjusting the electrical potentials of different grid zones to compensate for the non-uniform radiant exposure caused by substrate tilting. The control system modifies the irradiance parameters in each zone based on the substrate's tilted position, ensuring that all portions of the substrate receive uniform radiant exposure despite the angled ion beam incidence. This enables the elongation process to proceed with consistent etching quality across the entire substrate.
3Ease of operation
If a single uniform voltage is applied to the grid structure, then the system is simple to operate, but it cannot compensate for the non-uniform irradiation patterns caused by tilted ion beam incidence
Solution Approach 1:
The patent implements segmentation by dividing the grid structure into multiple independently controllable zones, each with its own electrical potential. This segmentation allows the control system to adjust irradiance levels in different regions to compensate for non-uniform irradiation patterns caused by tilted ion beam incidence. While the underlying structure remains relatively simple, the segmented control enables precise irradiation uniformity without significantly complicating system operation.
4Productivity
If the ion source output is increased to improve etching throughput, then productivity increases, but non-uniform irradiation effects are amplified leading to greater etching inconsistencies
Solution Approach 1:
The patent applies local quality by using multiple grid zones with independently adjustable electrical potentials to compensate for amplified non-uniform irradiation effects when ion source output is increased. Each zone can be tuned to provide the appropriate local irradiance level, ensuring that higher throughput operation does not sacrifice etching rate consistency across the substrate. This allows the system to operate at high productivity while maintaining uniform etching quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of the elongation process, improving the yield and reliability of integrated circuits by ensuring consistent etching across the substrate.
Implementation Method 1
The ion source can be configured to output a particle beam
Implementation Method 2
A first portion of the grid structure can be electrically insulated from a second portion of the grid structure... each portion of the grid structure can receive a different electrical potential
Data Source
AI summary
The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.