Anisotropic Ion Beam Grid Layout for High-Tilt Etch Uniformity
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Solution Overview
Problem
Existing ion beam etching technologies face challenges in achieving uniformity for substrates tilted at high angles, leading to positional and directional biases in etch rates.
Innovation Solution
The implementation of a grid system with varying hole densities and sizes, and individually controllable sections for voltage, allows for the creation of anisotropic ion beams with controlled ion beam energy density gradients, addressing the uniformity issues in high tilt angle etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional ion beam etching system is used, then the etching process can be performed, but uniformity is poor for substrates tilted at high angles due to positional and directional biases
Solution Approach 1:
The grid system is divided into multiple independently controllable sections (first section, second section, third section) along the beam propagation direction, each capable of having different voltages applied. This allows local adjustment of ion beam energy density at different positions along the tilt direction, compensating for the non-uniform exposure of high-tilt substrates to the ion beam and achieving uniform etching rates across the substrate surface.
2Manufacturing precision
If the ion beam energy density is uniform across the beam cross section, then the ion source is simple to control, but positional and directional biases occur in high tilt angle etching
Solution Approach 1:
The grid system is segmented into multiple independently controllable sections along the beam propagation direction. Each section can have its voltage independently adjusted to create the desired energy density distribution. This segmentation allows precise control of ion beam characteristics to match the specific requirements of high-tilt substrate etching, compensating for positional and directional biases.
Solution Approach 2:
The grid system voltages are made dynamically adjustable during the etching process. By changing the voltage distribution across different grid sections, the ion beam energy density profile can be adapted in real-time to compensate for substrate tilt effects, enabling uniform etching across different positions and directions on high-tilt substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances etch rate uniformity across substrates, improves positional and directional biases, and enables 1-dimensional horizontal etching, effectively addressing the limitations of existing technologies.
Implementation Method 1
The ion source is directionally orientated toward the substrate support and is configured to generate ions when plasma is struck
Implementation Method 2
ions are extracted from the ion source to form an ion beam
Implementation Method 3
The grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source
Data Source
AI summary
Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.