Ion Beam Thin-Film Processing to Prevent Hydrogen Brittleness
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Solution Overview
Problem
The challenge in semiconductor manufacturing is forming low-resistance metal wirings with sufficient crystallinity and grain size while preventing hydrogen brittleness, which is exacerbated by hydrogen ions in thin films formed using ion beam deposition processes.
Innovation Solution
A substrate processing apparatus with a first chamber for ion beam deposition and a second chamber for hydrogen ion irradiation and thermal treatment, utilizing a plasma generator and grid electrodes to generate and control hydrogen ion beams, ensuring adequate crystallinity and grain size while removing residual hydrogen ions to prevent brittleness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion beam deposition is used to form low-resistance thin films with sufficient crystallinity and grain size, then film quality is improved, but hydrogen ions remain on the thin film causing hydrogen brittleness
Solution Approach 1:
The patent utilizes hydrogen ion irradiation to remove hydrogen ions that have been incorporated into the thin film during ion beam deposition. By irradiating the thin film with hydrogen ions at controlled energy levels (1-10 keV), the hydrogen ions are knocked out of the film matrix, converting the harmful hydrogen incorporation into a beneficial hydrogen removal process that prevents hydrogen brittleness while preserving the high crystallinity and grain size achieved through ion beam deposition
Solution Approach 2:
The patent changes the energy parameter of hydrogen ion irradiation to optimize the balance between removing hydrogen ions and preserving film quality. By controlling the hydrogen ion energy within 1-10 keV and adjusting irradiation conditions, the process removes hydrogen from the thin film without causing damage to the crystalline structure or grain size, thus resolving the contradiction between film quality and hydrogen content
2Reliability
If hydrogen ion beam irradiation is applied to remove hydrogen ions from thin film, then hydrogen brittleness is prevented, but additional processing time and complexity are introduced
Solution Approach 1:
The patent combines the ion beam deposition system and hydrogen ion irradiation system into a single integrated apparatus. The same ion beam source used for deposition can be reconfigured to generate hydrogen ion beams for irradiation, merging two separate processing functions into one device. This reduces overall system complexity while maintaining the ability to perform both high-quality deposition and hydrogen removal
Solution Approach 2:
The ion beam source is designed to serve multiple functions: it can deposit metal ions to form thin films with high crystallinity and can also generate hydrogen ion beams to irradiate and purify the deposited films. This multi-functionality eliminates the need for separate specialized equipment, reducing device complexity while achieving both deposition quality and hydrogen removal
3Object-affected harmful factors
If thermal treatment is performed after hydrogen ion irradiation, then residual hydrogen is desorbed, but energy consumption increases
Solution Approach 1:
The patent maintains the thin film in a vacuum environment continuously from deposition through hydrogen ion irradiation to thermal treatment, eliminating the need for atmospheric exposure and re-vacuum cycles. This continuous vacuum process allows thermal treatment to be performed immediately after irradiation without energy-intensive vacuum breaking and re-establishment, reducing overall energy consumption while ensuring complete hydrogen removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively forms thin films with enhanced crystallinity and grain size, reducing resistance and preventing hydrogen brittleness by irradiating hydrogen ions before deposition and performing thermal treatment to desorb residual hydrogen, thus addressing the limitations of existing semiconductor processing methods.
Implementation Method 1
a plasma generator configured to generate plasma
Implementation Method 2
a first ion gun configured to irradiate an ion beam onto the target to discharge a deposition particle, which is an ion of the deposition material, to the substrate
Implementation Method 3
a second ion gun configured to irradiate a hydrogen ion beam toward the substrate
Implementation Method 4
remove hydrogen ions remaining on a thin film after a low-resistance thin film having sufficient crystallinity and a grain size is formed by irradiating a hydrogen ion beam
Implementation Method 5
the second chamber is configured to be provided with the substrate, on which the hydrogen ion beam has been irradiated, and perform thermal treatment on the substrate
Data Source
AI summary
A substrate processing apparatus including a first chamber configured to accommodate a substrate therein and a second chamber including a heater provided in an internal space thereof, wherein the first chamber includes a target assembly configured to fix a target including a deposition material, a first ion gun configured to irradiate an ion beam onto the target to discharge deposition particles, which are ions of the deposition material, to the substrate, and a second ion gun configured to irradiate a hydrogen ion beam toward the substrate, the second ion gun includes a plasma generator configured to generate plasma, and a first grid electrode and a second grid electrode each configured to extract ions from the container, and the second chamber is configured to be provided with the substrate, on which the hydrogen ion beam has been irradiated, and perform thermal treatment on the substrate.