Ion Beam Incidence Angle Detection Assembly
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Solution Overview
Problem
In semiconductor device fabrication, ion implantation processes face challenges in achieving uniformity of ion beam current density and incidence angle, leading to variations in device properties and reduced manufacturing yields due to energy contamination and non-uniform beam profiles.
Innovation Solution
An ion beam detector assembly with pairs of ion current sensors and a blocker panel is used to measure and analyze the incidence angles of the ion beam, allowing for adjustments to be made to ensure uniformity by calculating the angle of incidence and adjusting the beam current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ion beam parameters are not precisely controlled, then manufacturing throughput is reduced, but implementing precise control increases device complexity
Solution Approach 1:
The patent performs preliminary measurement of the ion beam profile and incidence angle using a detector array before actual ion implantation. This allows the system to pre-determine necessary adjustments to beam parameters, enabling precise control without adding complex real-time adjustment mechanisms during production, thus maintaining high throughput.
Solution Approach 2:
The patent replaces complex mechanical beam steering mechanisms with a detection-and-calculation approach. By using a detector array to measure beam parameters and calculating the required adjustments through software algorithms, the system achieves precise beam control without the mechanical complexity of additional ste
2Manufacturing precision
If beam current density and angle of implantation are not uniform, then device properties vary across substrate, but achieving uniformity increases measurement and control complexity
Solution Approach 1:
The patent divides the beam measurement task into multiple discrete detector elements arranged in an array. Each detector element measures local beam parameters, and the system integrates these segmented measurements to determine overall beam uniformity and calculate corrective adjustments, achieving precise control through distributed measurement.
Solution Approach 2:
The patent uses a two-dimensional detector array to measure beam parameters across the substrate area, adding spatial dimensionality to the measurement process. This allows simultaneous measurement of beam uniformity across multiple positions, enabling comprehensive analysis and correction of non-uniformity without requiring multiple sequential measurements.
3Measurement precision
If detector assembly moves across the ion beam path, then angle of incidence can be measured, but this requires precise positioning control
Solution Approach 1:
The patent makes the detector assembly self-positioning by using the ion beam itself as the reference for movement. The detector array moves across the beam path while continuously measuring beam parameters, and the system uses these measurements to automatically calculate the beam profile and incidence angle, eliminating the need for external positioning control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables precise control of ion beam uniformity, improving manufacturing yields and reducing processing costs by ensuring consistent device characteristics across semiconductor substrates.
Implementation Method 1
a first of the current sensors detects a first beam current, and a second of the current sensors detects a second beam current where each of the first and second detected beam currents are used to determine an angle of incidence of the ion beam
Data Source
AI summary
In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is coupled to the detector array to move together with the detector array. The blocker panel is also disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.