Ion Beam Sample Milling with Forecasted Impingement Imaging

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Solution Overview

Problem

Existing sample milling systems using ion beams face challenges in determining suitable milling process conditions due to complex variations in ion beam direction, making it difficult to achieve uniform etching across the sample surface.

Innovation Solution

A sample milling system integrated with an image generator apparatus that forecasts the ion beam's direction of impingement, allowing for the determination of suitable milling process conditions by simulating the milling process and displaying the forecasted imagery containing information about the ion beam's distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the center of the ion beam and the center of rotation of the sample are made to coincide, then the milling process is simpler to control, but the area irradiated by the ion beam is limited and uniform etching is difficult to achieve

Engineering Contradiction:
Improvecontrol simplicityVSAvoidirradiated area
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent intentionally introduces asymmetry by offsetting the center of rotation from the center of the ion beam. This asymmetric configuration allows the sample to be irradiated from multiple directions during rotation, expanding the effective irradiated area and achieving more uniform etching across the sample surface.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent transitions from a one-dimensional beam-sample alignment (coincident centers) to a two-dimensional configuration where the beam center and rotation center are offset. This dimensional change enables the sample to receive ion beam irradiation from multiple angular positions, expanding the irradiated area while maintaining operational simplicity through automated rotation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the center of the ion beam and the center of rotation of the sample are offset to irradiate a wider area, then the etching uniformity improves, but the direction of impingement varies in a complex manner making it difficult to determine suitable milling process conditions

Engineering Contradiction:
Improveetching uniformityVSAvoidprocess condition determination
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs simulation technology to perform preliminary analysis of the ion beam impingement directions under various milling conditions before actual experimentation. By pre-calculating and visualizing the impingement patterns, researchers can determine suitable process conditions without having to experimentally explore the complex parameter space, thus reducing the apparent complexity of process condition determination.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces simulation software as an intermediary tool between the physical milling system and the operator. This intermediary computes and displays the complex impingement direction distributions, translating the complex physical interactions into visual information that guides process condition selection, thereby simplifying the overall process determination.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of operation

If simulation technology is used to forecast ion beam impingement directions, then suitable milling process conditions can be determined easily, but additional computational resources and time are required

Engineering Contradiction:
Improveprocess condition determinationVSAvoidsimulation computation time
Core Design Contradiction:
Ease of operationVSLoss of time

Solution Approach 1:

The simulation performs preliminary calculations of impingement directions for various process conditions before actual milling begins. By pre-determining the optimal conditions through virtual experimentation, the need for time-consuming trial-and-error physical experiments is eliminated, ultimately saving time despite the computational overhead.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The simulation provides visual feedback on impingement direction distributions, allowing operators to quickly assess different process conditions and select optimal parameters. This feedback mechanism accelerates the process condition determination by replacing iterative physical experimentation with rapid computational evaluation and visual analysis.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the easy determination of suitable milling process conditions, ensuring uniform etching and expanding the area irradiated by the ion beam, thereby improving the milling efficiency and surface smoothness.

Implementation Method 1

a planar milling method is known which forms a smooth, flat plane by making use of sputtering occurring when an ion beam is made to impinge at a quite small tilt angle on the sample surface

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS20250006458A1Sample Milling System and Apparatus and Method for Image Generation
Publication Date: 2025.01.02 JEOL LTD
  • US20250006458A1 patent drawing
  • US20250006458A1 patent drawing
  • US20250006458A1 patent drawing

AI summary

There is provided a sample milling system permitting one to determine suitable milling process conditions easily. The sample milling system includes: a sample milling apparatus for milling a sample by making an ion beam impinge on the sample; and an image generator apparatus for generating forecasted imagery for a case where the sample is milled using the milling apparatus under preset milling process conditions. The forecasted imagery contains information about a distribution of directions of impingement of the ion beam.