Ion Implantation Beam Parallelizing Unit Multi-Energy Operation
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Solution Overview
Problem
Ion implantation apparatuses are limited by their categorization into high-current, medium-current, and high-energy categories, leading to compatibility issues and the need for multiple machines for various processing tasks, which increases costs and reduces productivity due to the inability to automatically match device characteristics across different categories.
Innovation Solution
An ion implantation apparatus with a beam parallelizing unit including acceleration and deceleration lenses, and a power supply unit that can operate under multiple energy settings, allowing the apparatus to function as both a high-current and medium-current system, thereby expanding its operational range and compatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ion implantation apparatuses are classified into separate categories (high-current, medium-current, high-energy), then each category can be optimized for its specific function, but multiple machines are required for various processing tasks, increasing costs and reducing productivity
Solution Approach 1:
The beam parallelizing apparatus is designed to function across multiple energy ranges by switching between different power supply connections. The same apparatus can operate as a high-current ion implantation apparatus, medium-current ion implantation apparatus, or high energy ion implantation apparatus depending on the power supply configuration, eliminating the need for separate dedicated machines for each category
Solution Approach 2:
The apparatus employs dynamic reconfiguration of the power supply connections through a switching mechanism. The connection between the ion source and power supply can be modified to extract ion beams with different current amounts, and the beam parallelizing unit can be operated under different energy settings to adapt to various processing requirements
2Reliability
If separate apparatuses are used for different ion implantation categories, then each apparatus can be optimized for its specific category, but compatibility issues arise and productivity decreases due to inability to automatically match device characteristics
Solution Approach 1:
A single beam parallelizing apparatus is designed to replace multiple category-specific apparatuses by implementing universal power supply connections that enable operation in high-current, medium-current, and high-energy modes. This eliminates compatibility issues between different apparatus categories and improves manufacturing efficiency through automated adaptation to different processing requirements
3Adaptability or versatility
If the beam parallelizing unit operates under a single energy setting, then the apparatus configuration can be simplified, but the operational range is limited and cannot serve multiple processing categories
Solution Approach 1:
The power supply system is designed with dynamic reconfiguration capability through switching mechanisms that can connect the ion source and beam parallelizing unit to different power supply configurations. This allows the same apparatus to operate under multiple energy settings (first energy setting for low energy ion beam, second energy setting for high energy ion beam) without requiring physically different apparatus configurations
Solution Approach 2:
The apparatus achieves multiple energy ranges by changing the electrical parameters of the power supply connections. By modifying the connection between the ion source and power supply, the system can extract ion beams with different current amounts and operate the beam parallelizing unit under different energy settings, expanding the operational range from single-energy to multi-energy capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables a single apparatus to handle a broad range of ion implantation conditions, improving productivity and reducing the need for multiple machines by allowing the same apparatus to operate effectively in both high-current and medium-current modes, enhancing flexibility and efficiency in semiconductor manufacturing.
Implementation Method 1
generating a potential difference in at least the acceleration lens under the second energy setting
Implementation Method 2
generating a potential difference in at least the deceleration lens under the first energy setting
Data Source
AI summary
An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.