Ion Beam Profile Detection via Absorption Array
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Solution Overview
Problem
Conventional ion implantation systems face challenges in accurately measuring and accounting for variations in ion beam width during scanning, leading to discrepancies between the specified and actual doping profiles in workpieces, which can result in improper functioning of implanted devices.
Innovation Solution
An improved beam profiling technique using an array of absorption and radiation elements that absorb and radiate energy from the scanned ion beam, allowing for accurate measurement of the beam profile through temperature detection, enabling precise calibration of the ion implantation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional beam profilers are used to measure ion beam width variations, then measurement capability is provided, but device complexity and mechanical assembly requirements increase substantially
Solution Approach 1:
The patent replaces complex mechanical beam profiler assemblies with a simplified detection system using a screen and camera. The beam profile is measured by capturing images of the beam's interaction with the screen, eliminating the need for substantial mechanical assemblies while maintaining measurement capability.
Solution Approach 2:
The patent creates a visual copy of the ion beam profile by projecting it onto a screen and capturing it with a camera. This optical copy allows measurement of beam width variations without requiring direct physical measurement devices in the beam path, reducing complexity.
2Measurement precision
If conventional beam profilers with complex signal processing are used, then beam profile measurement is achieved, but device complexity and signal processing requirements increase
Solution Approach 1:
The patent replaces complex signal processing electronics with optical detection. The camera captures the beam profile directly as an image, and standard image processing algorithms extract beam width measurements, eliminating complex signal processing requirements while maintaining measurement precision.
3Ease of manufacture
If ion beam width variations are not measured and accounted for, then the implantation process is simpler, but manufacturing precision of doping profile deteriorates
Solution Approach 1:
The patent performs beam profile measurement before the implantation process using the simplified screen-camera system. This preliminary measurement of beam width variations allows for compensation and adjustment of implantation parameters, ensuring accurate doping profiles while maintaining process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method provides a simplified and accurate means to determine the ion beam profile, ensuring that the implanted workpieces achieve the desired doping profile, thereby ensuring the correct functioning of semiconductor devices and other materials.
Implementation Method 1
an array of absorption and radiation elements arranged to absorb energy of the scanned ion beam and radiate at least some of the absorbed energy away from the propagation direction
Implementation Method 2
A detection element is arranged to detect energy radiated by the array of absorption and radiation elements and to determine a beam profile of the scanned ion beam based on the detected energy
Data Source
AI summary
One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece. The ion implanter also includes an array of absorption and radiation elements arranged to absorb energy of the scanned ion beam and radiate at least some of the absorbed energy away from the propagation direction. A detection element (e.g., an infrared detector) is arranged to detect energy (e.g., in the form of heat) radiated by the array of absorption and radiation elements and to determine a beam profile of the scanned ion beam based on the detected energy.