Ion Beam Profile Determination for Semiconductor Substrate Uniformity
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Solution Overview
Problem
The existing methods for adjusting the beam profile in ion beam irradiation treatments are time-consuming and complex, hindering the efficient startup and operation of ion beam irradiation apparatuses, particularly in semiconductor manufacturing where production capacity is a priority.
Innovation Solution
A new beam profile determination method that measures the beam profile orthogonal to the scanning and traveling directions of the ion beam, computes the uniformity of the dose distribution on the substrate surface, and compares it with a reference value to determine the adequacy of the beam profile, allowing for reduced adjustment and faster setup by optionally adjusting the substrate's tilt angle during irradiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If beam profile adjustment using multipole magnetic field or electric field is performed, then uniformity of beam profile is improved, but set-up time and operational complexity increase
Solution Approach 1:
The patent changes the parameter being measured from beam profile characteristics to dose distribution uniformity. By measuring the actual dose distribution on the substrate and comparing it with reference values, the system determines whether beam profile adjustment is needed, thereby avoiding unnecessary adjustments and reducing set-up time while ensuring required uniformity
Solution Approach 2:
The patent replaces complex mechanical beam profile adjustment mechanisms (multipole magnetic fields, electric fields) with a measurement and evaluation system. Instead of mechanically adjusting beam parameters, the system measures dose distribution and uses computational comparison to determine adequacy, substituting physical adjustment mechanisms with measurement-based decision making
2Manufacturing precision
If beam profile adjustment is performed, then uniformity of beam profile is improved, but device complexity and operational difficulty increase
Solution Approach 1:
The patent replaces complex mechanical beam profile adjustment mechanisms (multipole magnetic fields, electric fields) with a measurement and evaluation system. Instead of mechanically adjusting beam parameters, the system measures dose distribution and uses computational comparison to determine adequacy, substituting physical adjustment mechanisms with measurement-based decision making
Solution Approach 2:
The system performs self-evaluation by measuring its own dose distribution and comparing it with reference values to determine whether adjustment is needed. This self-service capability eliminates the need for complex external adjustment procedures and expert intervention, simplifying operation while maintaining precision
Data Source
AI summary
A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.