Ion Beam Parallelism Refraction Measurement
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Solution Overview
Problem
Conventional methods for determining ion beam parallelism in ion implantation are complex and lack the necessary accuracy, failing to achieve an error range of less than 1°, which is crucial for uniform impurity introduction in semiconductor wafers.
Innovation Solution
A system and method using a refraction method to determine ion beam parallelism by measuring the ion beam's position with and without an acceleration/deceleration electrical field, where the electrical field refracts the beam to magnify any non-parallelism, allowing for precise calculation of the beam's parallelism based on the lateral shift.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional methods are used to determine ion beam parallelism, then the measurement process is complex, but the measurement precision is insufficient (error range greater than 1°)
Solution Approach 1:
The patent introduces an acceleration/deceleration electrical field as an intermediary to magnify the lateral position shift of the ion beam. This field acts as a mediator that converts small angular deviations into larger positional changes, enabling more precise measurement of beam parallelism without requiring complex measurement equipment
Solution Approach 2:
The patent replaces complex mechanical measurement systems with an electrical field-based measurement approach. By using acceleration/deceleration electrical fields to induce lateral position shifts and measuring these shifts electrically, the system achieves higher precision while reducing mechanical complexity
2Manufacturing precision
If conventional methods are used to determine ion beam parallelism, then the device structure is complex, but the measurement accuracy is insufficient
Solution Approach 1:
The patent changes the energy state parameter of the ion beam by applying acceleration or deceleration electrical fields. This parameter change causes a lateral position shift that magnifies angular deviations, allowing precise determination of beam parallelism through simple position measurements rather than complex angular measurements
3Measurement precision
If the ion beam is exposed to acceleration/deceleration electrical field, then the lateral position shift magnifies non-parallelism, but this requires additional field application complexity
Solution Approach 1:
The patent applies acceleration and deceleration electrical fields in a periodic or alternating manner. By switching between acceleration and deceleration modes, the system magnifies lateral position shifts in opposite directions, allowing measurement of beam parallelism through the difference in position shifts while maintaining operational simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate determination and adjustment of ion beam parallelism, ensuring repeatable and precise impurity introduction with improved control over the angle of incidence, enhancing the performance of semiconductor devices.
Implementation Method 1
The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism.
Data Source
AI summary
A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.