Ion Beam Scanning and Collimation for Uniform Implantation
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Solution Overview
Problem
Conventional ion implantation systems face challenges in achieving uniform ion beam incident angles and dose accuracy, particularly at high currents and low energies, leading to non-uniform dopant distribution and increased production costs due to complex operations and equipment complexity.
Innovation Solution
An improved ion implantation apparatus featuring a convergent extraction-optics, magnetic beam scanner, mass analyzer, and rectangular quadrupole magnet for collimating the ion beam, along with a diagnostic system for measuring beam currents and angles, allowing for independent control of beam intensity and angle uniformity, and enabling one-dimensional or two-dimensional mechanical scans to optimize implantation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spot beam smaller than target is used with 2D mechanical scans, then dose uniformity can be achieved, but productivity deteriorates due to longer scanning time and beam waste during turns around
Solution Approach 1:
The system eliminates the stop-and-go nature of conventional 2D mechanical scanning by implementing continuous beam scanning. The magnetic scanner enables the beam to continuously sweep across the substrate without mechanical interruptions, eliminating idle time during turnarounds and maintaining continuous useful implantation action.
Solution Approach 2:
The invention replaces mechanical scanning systems with magnetic beam scanning. By using magnetic fields to deflect and scan the beam across the substrate, the system eliminates mechanical inertia and acceleration/deceleration cycles, enabling faster and more continuous scanning that improves productivity while maintaining dose uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures high-current, high-uniformity ion implantation without sacrificing angle uniformity, reducing production costs and simplifying processes, while achieving efficient and uniform ion distribution on substrates.
Implementation Method 1
a magnetic beam scanner and magnetic analyzer for selecting ions with specific mass-to-charge ratio
Implementation Method 2
a rectangular quadruple magnet for collimations of the scanned ion beam
Implementation Method 3
The extraction-optics has a concave geometry to produce a beam that is converging as it leaves the extraction-optics
Data Source
AI summary
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.