Ion Beam Sputtering Getter Layer Deposition
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Solution Overview
Problem
The existing deposition processes for getter materials in microelectronic and nanoelectronic systems, such as cathode sputtering, suffer from impurity formation and significant pressure-related pollution, which hinder the achievement of a deep vacuum and effective gas control in chambers.
Innovation Solution
A method involving ion beam sputtering with a target composed of vanadium, zirconium, and titanium, where ions are propelled at an oblique angle to deposit a getter layer on a substrate, reducing impurities and enhancing the getter's strength and pumping capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If cathode sputtering is used to deposit getter material, then the deposition process can be performed, but impurities are formed in the deposited layer and gas pollution occurs due to significant pressure
Solution Approach 1:
The patent extracts and removes the harmful elements (impurities and gas pollutants) from the deposition process by operating at extremely low pressures (10^-6 to 10^-9 hectopascal) and using ion beam sputtering that minimizes contamination, thereby achieving high purity getter layer deposition without the harmful side effects of cathode sputtering
Solution Approach 2:
The patent changes the operating parameters of the deposition process by reducing the pressure to extremely low levels (10^-6 to 10^-9 hectopascal) and using ion beam sputtering instead of cathode sputtering, which fundamentally alters the deposition mechanism to reduce impurity formation and gas pollution while maintaining effective getter layer formation
2Strength
If cathode sputtering is used, then deposition can proceed, but the atomic energy transfer is insufficient resulting in weaker getter strength on the substrate
Solution Approach 1:
The patent changes the energy parameters of the deposition process by using ion beam sputtering which imparts higher atomic energy to the deposited particles. The ions are accelerated to higher energies, transferring more kinetic energy to the getter atoms during deposition, resulting in stronger adhesion and more robust getter layer formation on the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes particle pollutants, increases atomic energy transfer, and results in a getter layer with improved strength and pumping capacity, effectively maintaining a deep vacuum and controlling gas composition in chambers.
Implementation Method 1
propelling ions against the target to extract particles of metallic material therefrom, and project them against a surface of the substrate
Implementation Method 2
gives the particles of metallic material a greater atomic energy, which enables a better strength of the getter on the substrate
Data Source
AI summary
A method of manufacturing a pump element for a chamber under partial gas pressure, the pump element including a substrate covered with a getter layer based on metallic material, including the following steps: placing, in a vacuum processing chamber, the substrate and a target in said metallic material, propelling ions against the target to extract particles of metallic material therefrom and project them against a surface of the substrate at an oblique angle of incidence. A chamber under partial gas pressure containing a getter produced in this way.