Ion Beam Sputtering for Organic Layer Deposition
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Solution Overview
Problem
Conventional sputtering techniques, such as magnetron sputtering and S-gun configurations, cause plasma damage to organic layers in electronic devices like OLEDs due to direct exposure to charged particles and radiation during the deposition of inorganic layers.
Innovation Solution
The process involves forming an electronic device by generating a plasma in a separate chamber and using an ion beam to deposit an inorganic layer over an organic layer without direct contact, minimizing exposure to charged particles and radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional magnetron sputtering is used to deposit inorganic layers, then deposition efficiency is improved, but plasma damage to organic layers increases
Solution Approach 1:
The system is divided into two separate chambers: a plasma-generating chamber for creating the plasma and an deposition chamber for receiving the ion beam. This spatial segmentation allows the plasma to be generated without direct contact with the workpiece, eliminating plasma damage while maintaining deposition efficiency through controlled ion beam delivery.
Solution Approach 2:
An ion beam acts as an intermediary between the plasma source and the workpiece. The ion beam carries the reactive species from the plasma to the deposition chamber, enabling material deposition without exposing the organic layers to direct plasma contact and associated charged particle damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces plasma damage and enhances the efficiency and longevity of OLEDs by allowing for the deposition of inorganic layers without compromising the organic layers, as seen in improved radiation-emitting component efficiency and extended device lifetime.
Implementation Method 1
generating a plasma within a plasma-generating chamber of the depositing apparatus
Implementation Method 2
generating a plasma within a plasma-generating chamber
Implementation Method 3
depositing the second layer is performed using ion beam sputtering
Implementation Method 4
depositing a layer of the material over the organic layer
Data Source
AI summary
A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.


