Ion Beam Sputtering Targets for Uniform Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing ion sputtering installations face challenges in achieving uniform thickness of deposited material on substrates, often requiring large, costly setups and complex configurations to maintain vacuum and ensure homogeneous irradiation.
Innovation Solution
The use of multiple small-dimension targets distributed symmetrically around an axis orthogonal to the substrate, with separate ion source and sputtering chambers, and systems for moving and orienting targets to control deposition profiles, allows for independent vacuum control and precise thickness regulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate is placed at a large distance from the target to achieve uniform thickness deposition, then the deposit thickness uniformity is improved, but the installation size and vacuum chamber volume increase
Solution Approach 1:
The patent divides the single target into multiple small targets (at least two) arranged in a specific geometric configuration around the substrate. Each target is bombarded by ion beams to deposit material. This segmentation allows the substrate to be positioned closer to the targets while still achieving uniform thickness deposition through the geometric arrangement, thereby reducing the vacuum chamber volume required.
Solution Approach 2:
The patent transitions from a single target-normal incidence geometry to a multi-target configuration where targets are arranged in three-dimensional space around the substrate (e.g., at angles of 45° to the substrate normal). This dimensional change in target arrangement allows uniform deposition at shorter distances by distributing material flux from multiple spatial directions.
2Manufacturing precision
If the target surface area is enlarged to cover the substrate surface, then the deposit thickness uniformity is improved, but the target cost and manufacturing complexity increase
Solution Approach 1:
Instead of using one large target, the patent employs multiple smaller targets (at least two) that are easier to manufacture with high purity and uniform properties. These small targets are arranged in a specific geometry around the substrate, achieving uniform deposition through their collective contribution rather than through a single large target surface.
3Manufacturing precision
If electromagnetic deflectors are used to homogenize ion beam and particle distribution, then the deposit thickness uniformity is improved, but the device complexity and cost increase
Solution Approach 1:
The patent achieves homogenization of particle distribution on the substrate by segmenting the single source into multiple small targets arranged in specific geometric configurations. The spatial distribution of these targets naturally homogenizes the material flux across the substrate surface, eliminating the need for complex electromagnetic deflectors.
Solution Approach 2:
The patent replaces the electromagnetic deflection system with a geometric arrangement of multiple targets. The spatial configuration of targets and their relative positions to the substrate create uniform deposition patterns through geometric principles rather than electromagnetic field manipulation, thereby reducing device complexity.
4Manufacturing precision
If mechanical displacement systems are used to move the substrate for uniform deposition, then the deposit thickness uniformity is improved, but the device complexity and installation size increase
Solution Approach 1:
The patent eliminates the need for substrate displacement mechanisms by using multiple small targets arranged in specific geometric configurations. The stationary substrate receives uniform deposition from multiple stationary targets positioned around it, achieving thickness uniformity without mechanical movement of the substrate.
5Device complexity
If a single chamber is used for ion source, target and substrate, then the device complexity is reduced, but the vacuum pressure control and beam quality deteriorate
Solution Approach 1:
The patent divides the vacuum system into separate chambers: an ion source chamber and a deposition chamber containing the targets and substrate. These chambers are connected by a small aperture that allows ion beams to pass while maintaining different vacuum pressure levels in each chamber. This segmentation enables independent optimization of ion source performance and deposition conditions, improving beam quality while maintaining manageable device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the achievement of uniform or predetermined thickness profiles on substrates with reduced installation size and cost, while maintaining independent vacuum control in the ion source and sputtering zones.
Implementation Method 1
a beam of relatively heavy ions, for example argon, is directed towards a target to produce the sputtering of particles of the material or materials constituting this target
Implementation Method 2
A source of ions 1 emits a beam of ions 3 in the direction of a target 5 and the bombarded zone of the target sputters particles of the material of the target which are in particular received on a substrate 7
Data Source
Figure 1~2
Figure 3A~3C
Figure 4~5
AI summary
The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which includes a plurality of targets (11) of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less than one tenth of the lateral dimensions of the substrate (15).