Ion Beam Lithography for Damage-Free TMD Patterning

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Traditional lithography processes, such as electron beam lithography, cause irreversible damage to transition metal dichalcogenides (TMDs) and degrade their electronic properties, leading to high contact resistance and implementation challenges in next-generation transistors, which are not effectively addressed by current methods.

Innovation Solution

The use of ion beam lithography and nanoengineering techniques, specifically helium and neon ion beams, for precise patterning and direct milling of TMDs, enabling damage-free lithographic patterning and reducing contact resistance, allowing for the preservation of TMDs' electronic properties and facilitating the fabrication of TMD-based transistors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional electron beam lithography is used for patterning TMDs, then lithographic patterning can be achieved, but irreversible damage is caused to TMDs and their electronic properties are degraded

Engineering Contradiction:

Improvelithographic patterning precisionVSAvoiddamage to TMDs and degradation of electronic properties

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent uses a resist layer as an intermediary material between the electron beam and the TMDs. The electron beam patterns the resist layer, which then serves as a mask to protect the TMDs during subsequent etching processes. This intermediary approach allows lithographic patterning to be achieved without the electron beam directly damaging the TMDs.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies a resist layer to the TMDs before performing electron beam lithography. This preliminary action prepares the structure in advance to protect the TMDs from direct electron beam exposure, preventing irreversible damage while still enabling precise patterning through the resist layer.

Inventive Principle:

Principle #10Preliminary action

2Adaptability or versatility

If TMDs are used as silicon replacement in transistors, then next-generation transistor implementation is enabled, but high contact resistance between metals and TMDs prevents successful implementation

Engineering Contradiction:

ImproveTMDs as silicon replacementVSAvoidcontact resistance between metals and TMDs

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent replaces traditional mechanical/contact-based metal-TMD interfaces with a chemically engineered interface. By using ion beam lithography to create precise patterns and form appropriate contact structures, the patent enables reliable electrical contact between metals and TMDs, overcoming the high contact resistance issue that prevents TMD-based transistor implementation.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Ease of manufacture

If conventional lithography processes are used, then fabrication can proceed, but the absence of a viable process to form n and p-type channels from TMDs remains a major problem

Engineering Contradiction:

Improvefabrication processVSAvoidformation of n and p-type channels from TMDs

Core Design Contradiction:

Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent uses ion beam lithography to precisely control the patterning and fabrication parameters, enabling the formation of different channel types. By adjusting ion beam energy, resist layer thickness, and etching conditions, the patent enables viable processes to form both n-type and p-type channels from TMDs, addressing the versatility issue in TMD-based transistor fabrication.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Ion beam lithography and nanoengineering provide superior resolution and precision, enabling the fabrication of TMD-based transistors with improved performance by minimizing damage to TMDs, reducing contact resistance, and enabling large-scale deployment of TMD-based devices.

Implementation Method 1

applying an ion beam targeted to one or more regions of the resist layer

Methodology Applied

Scientific EffectIon beam: Ion Beam

Implementation Method 2

performing milling using the ion beam targeting the top layer to create a predetermined pattern

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS20240222073A1Ion beam lithography and nanoengineering

Publication Date: 2024.07.04 INTEL CORP

AI summary

This disclosure describes systems, apparatus, methods, and devices related to ion beams fabrication. A device may overlay a wafer assembly of one or more layers with a top layer comprised of a material having 2D material characteristics. The device may be fabricated by applying an ion beam targeted to at least one of one or more regions of the top layer or a resist layer placed on top of the top layer, wherein the ion beam is tuned using a predetermined energy range or a dosing level of ions to modify material characteristics of the resist layer or to perform milling of the top layer or other layers of the one or more layers of the wafer assembly.