Ion Beam Patterning in Transparent Materials for Faster 3D Engraving
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Solution Overview
Problem
Existing methods for engraving patterns in transparent materials, such as glass, are time-consuming and not suitable for industrial applications due to their slow processing times.
Innovation Solution
A method using a mono- or multicharged ion beam, guided by a mask, to structure decorative or technical patterns in the thickness of transparent materials, which allows for rapid and automated three-dimensional pattern creation by penetrating the material and creating void defects that act as light scattering centers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a laser beam is used to engrave patterns in transparent materials by creating microcracks, then two- or three-dimensional patterns can be produced, but the processing time is frequently long which renders industrial use problematic
Solution Approach 1:
The patent replaces the laser beam (optical system) with an ion beam (particle physics system) to structure transparent materials. The ion beam directly modifies the material structure through physical bombardment and localized melting, eliminating the need to create microcracks via thermal expansion and subsequent cooling, thereby significantly reducing processing time while maintaining pattern precision
Solution Approach 2:
The patent changes the fundamental parameter of the engraving process from optical energy (laser) to particle kinetic energy (ion beam). By adjusting ion beam parameters such as energy, current density, and scanning speed, the process achieves both high precision pattern creation and improved processing efficiency suitable for industrial applications
2Manufacturing precision
If a mask is used to guide the ion beam through openings corresponding to the pattern profile, then selective structuring is achieved, but the mask must prevent ion etching at covered positions requiring specific mechanical properties
Solution Approach 1:
The patent introduces a mask as an intermediary element between the ion beam source and the transparent material. The mask selectively blocks the ion beam at positions where no patterning is desired while allowing ion passage through openings that define the pattern profile, thereby achieving precise pattern definition without direct contact between the ion beam and the material at protected areas
Solution Approach 2:
The mask implements local quality by having different properties at different locations: openings at positions requiring structuring and solid material at positions requiring protection. This spatial variation in the mask's permeability to ions enables selective pattern creation while preventing unwanted etching at covered positions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables rapid and automated creation of three-dimensional patterns with controlled optical properties, improving processing efficiency and enabling industrial-scale production of patterned transparent objects.
Implementation Method 1
a method using a mono- or multicharged ion beam, guided by a mask, to structure decorative or technical patterns in the thickness of transparent materials
Implementation Method 2
creating void defects that act as light scattering centers
Implementation Method 3
the mechanical properties of the mask being sufficient to prevent the ions of the ion beam from etching the at least one top or bottom surface of the object
Data Source
AI summary
A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.