Ion Blocker Gas Routing for Higher Plasma Etchant Generation
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Solution Overview
Problem
The existing substrate processing methods using plasma etching face limitations in the generation efficiency of etchants due to restricted reaction between processing gases and radicals, primarily occurring only in the gas mixing region.
Innovation Solution
A substrate processing apparatus and method that includes an ion blocker with flow path units allowing the second processing gas to be supplied to both the plasma generating region and the gas mixing region, enabling reactions with plasma radicals in both areas, thereby enhancing etchant generation efficiency and selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the second processing gas is supplied only to the gas mixing region, then the device complexity is reduced, but the etchant generation efficiency deteriorates
Solution Approach 1:
The ion blocker is divided into multiple regions (first region and second region) with distinct flow path units. The first blocker flow path unit supplies second processing gas to the plasma generating region through first blocker holes, while the second blocker flow path unit supplies it to the gas mixing region through second blocker holes. This segmentation allows targeted gas distribution to maximize etchant generation without excessive complexity
Solution Approach 2:
The ion blocker serves multiple functions: it blocks ions from reaching the substrate, supplies second processing gas to both the plasma generating region and gas mixing region through its dual flow path units, and facilitates enhanced etchant generation. This multi-functionality improves etchant generation efficiency without requiring separate dedicated components for each function
2Productivity
If the second processing gas is supplied to both the plasma generating region and gas mixing region, then the etchant generation efficiency is improved, but the device complexity increases
Solution Approach 1:
The first blocker flow path unit and second blocker flow path unit are integrated into a single ion blocker component rather than using separate components. The ion blocker combines ion blocking, plasma region gas supply, and gas mixing region gas supply functions in one unified structure, reducing overall device complexity while maintaining enhanced etchant generation efficiency
3Stability of the object's composition
If the reaction between processing gas and radicals is restricted to the gas mixing region, then the plasma generating region stability is maintained, but the etchant generation efficiency is limited
Solution Approach 1:
The second processing gas is supplied to the plasma generating region in advance through the first blocker flow path unit, allowing preliminary reactions with radicals to occur before the gas mixture reaches the gas mixing region. This preliminary action expands the reaction zone and enhances etchant generation efficiency while maintaining plasma stability through controlled gas distribution
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the mixing efficiency of the second processing gas and radicals, improving the generation efficiency of the etchant and increasing selectivity in the etching process.
Implementation Method 1
a high-frequency power supply applying a high-frequency voltage to the processing chamber
Implementation Method 2
converting the first processing gas into a plasma state in the plasma generating region
Implementation Method 3
generating an etchant by reacting the second processing gas with radicals of the plasma
Data Source
AI summary
A substrate processing apparatus includes: a processing chamber including a plasma generating region, a gas mixing region, and a substrate processing region; a first gas supply line supplying a first processing gas to the plasma generating region; a second gas supply line supplying a second processing gas to the gas mixing region; an ion blocker disposed between the plasma generating region and the gas mixing region; and a shower head disposed between the gas mixing region and the substrate processing region, wherein the ion blocker has a first blocker flow path unit connected to the second gas supply line and open to the plasma generating region, so that the second processing gas is supplied to the plasma generating region.