Ion Implantation Channeling Control Through Wafer Temperature
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, achieving a desired ion implantation profile is challenging due to the limitations in controlling the implantation angle of the ion beam, which affects the depth and spread of the implanted ions, especially when using high-energy beams and masks with high aspect ratios, leading to restricted incident angles and suboptimal implantation profiles.
Innovation Solution
The method involves heating or cooling the wafer to a predetermined temperature using a temperature adjustment device to control the channeling condition, allowing for precise control of the ion implantation profile by adjusting the angular condition of the ion beam, thereby altering the depth and spread of the implanted ions in the wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the implantation angle of the ion beam is controlled to satisfy a predetermined channeling condition, then deeper implantation can be achieved, but the control of implantation angle is limited when using masks with high aspect ratios
Solution Approach 1:
The patent changes the temperature parameter of the wafer to control the channeling condition. By adjusting the wafer temperature, the implantation profile can be controlled without requiring precise angular control, thus achieving deeper implantation while overcoming the limitations of high aspect ratio masks that restrict angle control.
2Manufacturing precision
If the implantation angle is controlled to achieve a desired implantation profile, then the profile precision is improved, but the device complexity increases due to the need for precise angle control mechanisms
Solution Approach 1:
The patent replaces the mechanical angular control system with a thermal control system. Instead of using complex mechanical mechanisms to precisely control the implantation angle, the invention uses temperature adjustment to control the channeling condition, thereby achieving precise implantation profiles with simpler device architecture.
3Length of moving object
If high-energy ion beams are used to achieve deeper implantation, then the implantation depth is improved, but the in-plane spread of implanted ions increases
Solution Approach 1:
The patent uses temperature as a control parameter to manage the channeling condition during high-energy ion implantation. By optimizing the wafer temperature, the invention achieves deeper implantation while controlling the in-plane spread of implanted ions, thus resolving the trade-off between depth and spread.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of desired implantation profiles with improved control over the depth and spread of implanted ions, allowing for deeper implantation and reduced in-plane spread, addressing the limitations of traditional methods by optimizing the channeling condition through temperature adjustments.
Implementation Method 1
heating or cooling the wafer to a predetermined temperature using a temperature adjustment device
Implementation Method 2
heating or cooling the wafer to a predetermined temperature using a temperature adjustment device
Implementation Method 3
a process of implanting ions into a semiconductor wafer (referred to as an ion implantation process)
Data Source
AI summary
An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.