3D Nonvolatile Memory Device With Ion Exchange Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current nonvolatile memory devices with three-dimensional structures face challenges in efficiently storing and retrieving multi-level signal information due to limitations in their charge storage mechanisms, particularly in resistance change memory devices that rely on ion exchange for resistance state changes.
Innovation Solution
A nonvolatile memory device design featuring a gate structure with alternately stacked gate electrode layers and interlayer insulation layers, incorporating first and second ion retention layers that exchange ions, allowing for the storage of multi-level electrical resistance states by controlling lithium ion movement and oxygen vacancy concentration within the ion retention layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of information
If a traditional flash memory structure with charge storage layers is used, then the device can store data non-volatilely, but it cannot efficiently store and retrieve multi-level signal information
Solution Approach 1:
The patent changes the storage mechanism from charge-based to resistance-based by introducing ion retention layers that utilize oxygen vacancy concentration and lithium ion movement. This parameter change enables multi-level signal information storage through variable resistance states (low resistance state and high resistance state) without requiring complex charge storage layers, thus resolving the contradiction between information storage capability and mechanism complexity
Solution Approach 2:
The patent substitutes the charge storage mechanism (electrical charge trapping) with an ion exchange mechanism (lithium ion movement and oxygen vacancy concentration changes). This substitution replaces the traditional flash memory charge storage system with a resistance change memory system that can naturally represent multiple signal levels through different resistance states, eliminating the need for complex charge storage structures
2Manufacturing precision
If ion exchange is used for resistance state changes, then resistance states can be varied between high and low, but the control precision for multi-level resistance states is insufficient
Solution Approach 1:
The patent introduces a gate structure with gate electrode layers and interlayer insulation layers as an intermediary control mechanism. This gate structure precisely controls the ion exchange process between the first and second ion retention layers by applying voltages to the gate electrodes, enabling precise manipulation of oxygen vacancy concentration and lithium ion movement. The gate structure acts as a mediator that translates electrical signals into controlled ion movement, achieving precise resistance state control while maintaining ease of operation through standard gate control mechanisms
Solution Approach 2:
The patent segments the ion retention function into separate first and second ion retention layers, each with specific roles in the ion exchange process. This segmentation allows independent control and optimization of ion storage and ion release functions, improving the precision of resistance state control by managing ion exchange in a staged, controlled manner rather than as a single undifferentiated process
3Productivity
If a three-dimensional stacked structure is adopted, then integration density increases, but the efficiency of storing and retrieving information decreases
Solution Approach 1:
The patent transitions from planar charge storage to vertical three-dimensional stacking of ion retention layers. By stacking the first and second ion retention layers vertically with gate structures between them, the patent achieves high integration density in the vertical dimension while maintaining efficient information storage and retrieval through the resistance change mechanism. This dimensional transition allows multiple memory cells to be stacked vertically, increasing storage capacity without proportionally increasing planar area, thus improving storage efficiency while managing device volume
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the storage of multiple resistance levels in a non-volatile manner, effectively addressing the limitations of existing devices by allowing for precise control of electrical resistance states, thereby enhancing data storage capabilities.
Implementation Method 1
The first and second ion retention layers comprise ions exchangeable with each other
Data Source
AI summary
A nonvolatile memory device according to an embodiment includes a substrate and a gate structure disposed on the substrate. The gate structure includes at least one gate electrode layer and at least one interlayer insulation layer that are alternately stacked. In addition, the nonvolatile memory device includes a hole pattern penetrating the gate structure on the substrate, and a gate insulation layer, a first ion retention layer, a second ion retention layer, and a channel layer sequentially covering a sidewall surface of the gate electrode layer in the hole pattern. The first and second ion retention layers comprise ions exchangeable with each other.