Ion-Exchanged Piezoelectric Layers for Monocrystalline Acoustic Filters

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current technologies for producing piezoelectric layers for acoustic wave devices are limited by the availability of materials, particularly for surface acoustic wave filters, which rely mainly on quartz, LiNbO3, and LiTaO3, offering restricted parameter optimization and limited substrate options, while bulk acoustic wave filters compromise on crystalline quality for uniform thickness.

Innovation Solution

A method to produce a monocrystalline layer of composition AA′BO3 by thinning a donor substrate of ABO3 and exposing it to a medium containing ions of element A′, allowing ion penetration and diffusion to form a layer with enhanced properties, enabling the use of various materials and substrates for improved device performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a monocrystalline piezoelectric layer is used for surface acoustic wave filters, then the crystalline quality is excellent and surface wave propagation is favored, but the material choices are limited to quartz, LiNbO3, or LiTaO3

Engineering Contradiction:
Improvecrystalline qualityVSAvoidmaterial choices
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The invention changes the chemical composition parameter of the piezoelectric layer by introducing ion exchange processes. Starting with a monocrystalline ABO3 layer (such as LiNbO3 or LiTaO3), the method performs ion exchange where lithium ions are replaced by other metal ions (Na+, K+, Cs+, Ag+, Tl+, or combinations thereof) to create composite compositions like Li1-xMxNbO3 or Li1-xMxTaO3. This allows tuning of piezoelectric, acoustic, and optical properties while preserving the monocrystalline structure, thus resolving the contradiction between maintaining high crystalline quality and expanding material versatility.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates composite piezoelectric materials by combining multiple elements within the crystal structure. The ion-exchanged layers produce composite compositions such as Li1-xMxNbO3, Li1-xMxTaO3, or mixed-ion compositions like Li1-x-yMxNayNbO3, where different metal ions occupy specific lattice positions. These composite materials retain the monocrystalline structure of the host material while incorporating the properties of the exchanged ions, enabling customized piezoelectric properties without sacrificing crystalline quality.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If a polycrystalline piezoelectric layer is used for bulk acoustic wave filters, then the thickness can be uniformly controlled, but the crystalline quality is compromised

Engineering Contradiction:
Improvethickness uniformityVSAvoidcrystalline quality
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The invention applies preliminary ion exchange treatment to the piezoelectric layer before final thickness adjustment or device assembly. By performing ion exchange on the monocrystalline layer prior to thinning or patterning, the crystalline quality is established and enhanced in advance. Subsequent processing steps can then achieve precise thickness control without compromising the already-optimized crystalline structure, as the ion-exchanged layer maintains its monocrystalline integrity throughout further manufacturing steps.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the piezoelectric layer thickness is increased for surface acoustic wave filters, then the wave propagation is favored, but the layer becomes too thick for certain applications

Engineering Contradiction:
Improvewave propagation efficiencyVSAvoidlayer thickness
Core Design Contradiction:
ReliabilityVSLength of moving object

Solution Approach 1:

The invention changes the compositional parameters of the piezoelectric layer through ion exchange to optimize the piezoelectric coupling coefficient and acoustic velocity. By adjusting the concentration and type of exchanged ions (varying x in Li1-xMxNbO3), the layer thickness can be reduced while maintaining or improving wave propagation efficiency. The ion-exchanged composition allows thinner layers to achieve the same or better performance than thicker conventional layers, as the modified piezoelectric properties enhance the electromechanical coupling.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method allows for the production of thin, uniform, and high-quality piezoelectric layers with greater material flexibility, enhancing the performance and design freedom of both surface and bulk acoustic wave devices without compromising crystalline quality.

Implementation Method 1

exposing the layer of composition ABO3 to a medium containing ions of an element A′ belonging to the same list of elements as A, A′ being different from A, such that the ions penetrate into the layer to form a layer of composition AA′BO3

Methodology Applied
Scientific EffectIon penetration: Ion Implantation

Implementation Method 2

allowing ion penetration and diffusion to form a layer with enhanced properties

Methodology Applied
Scientific EffectDiffusion: Diffusion

Data Source

PatentUS11744153B2Method for producing a layer by thinning and ion penetration
Publication Date: 2023.08.29 SOITEC SA
  • US11744153B2 patent drawing
  • US11744153B2 patent drawing
  • US11744153B2 patent drawing

AI summary

A method for producing a layer of composition AA′BO3, wherein A consists of at least one element selected from the group consisting of: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B consists of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr and Tl, is described. The method includes providing a donor substrate of composition ABO3, forming a layer of composition ABO3 by thinning the donor substrate, and exposing the layer of composition ABO3 to a medium containing ions of an element A′ belonging to the same list of elements as A, A′ being different from A, such that the ions penetrate into the layer of composition ABO3 to form the layer of composition AA′BO3.