Ion-Embedded Field Plate Structures for Transistor Breakdown Voltage
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Solution Overview
Problem
III-N transistors face challenges in large-scale implementation due to premature breakdown caused by drain electric field concentration at the edge of the gate, which conventional metal field plates fail to address effectively without incurring large parasitic capacitance.
Innovation Solution
The integration of ion- or fixed charge-based field plate structures embedded in a dielectric material between the gate and drain electrodes of a transistor, allowing for controlled electric field distribution and increased breakdown voltage without parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional metal field plates are used to address drain electric field concentration, then breakdown voltage is improved, but parasitic capacitance increases
Solution Approach 1:
The patent changes the physical state and material properties of the field plate from conventional metal to ion-implanted or fixed-charge regions within the dielectric material. This parameter change allows the field plate to generate the necessary electric field for breakdown voltage enhancement while eliminating the parasitic capacitance associated with metal structures.
Solution Approach 2:
The patent replaces the conventional metal-based field plate structure with an ion- or fixed-charge-based field plate structure embedded in the dielectric material. This substitution eliminates the parasitic capacitance problem while maintaining the electric field control function needed to improve breakdown voltage.
2Reliability
If metal field plates are used to control electric field distribution, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the field plate function with the existing dielectric material by embedding ion-implanted or fixed-charge regions directly within it. This integration eliminates the need for separate metal field plate structures and their associated complex patterning and deposition processes, thereby reducing device complexity while maintaining reliability improvements.
Solution Approach 2:
The dielectric material serves multiple functions: it provides electrical isolation between gates and drains, and simultaneously houses the ion- or fixed-charge-based field plate structures for electric field control. This multi-functionality reduces the number of separate components needed, simplifying the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the breakdown voltage of transistors while minimizing parasitic capacitance, enabling more nuanced control of the drain electric field and improving the reliability of III-N transistors for high voltage and high frequency applications.
Implementation Method 1
The conductivity between the drain and source terminals is controlled by an electric field in the device, which is generated by the voltage difference between the source and the gate of the device
Implementation Method 2
a region within the dielectric material, between the gate electrode and the drain electrode, that includes a plurality of deliberately added ions
Data Source
AI summary
Disclosed herein are IC structures, packages, and devices assemblies that use ions or fixed charge to create field plate structures which are embedded in a dielectric material between gate and drain electrodes of a transistor. Ion- or fixed charge-based field plate structures may provide viable approaches to changing the distribution of electric field at a transistor drain to increase the breakdown voltage of a transistor without incurring the large parasitic capacitances associated with the use of metal field plates. In one aspect, an IC structure includes a transistor, a dielectric material between gate and drain electrodes of the transistor, and an ion- or fixed charge-based region within the dielectric material, between the gate and the drain electrodes. Such an ion- or fixed charge-based region realizes an ion- or fixed charge-based field plate structure. Optionally, the IC structure may include multiple ion- or fixed charge-based field plate structures.