Grounded Ion Filter Chamber for Uniform ALE and ALD

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Solution Overview

Problem

Conventional ALE and ALD processes face challenges in achieving uniformity and consistency, particularly for high aspect ratio structures, due to the difficulty in balancing ion and neutral fluxes, and the introduction of RIE components during the surface modification step compromises the ideality of ALE processes, leading to non-uniform layer removal and undesirable etching profiles.

Innovation Solution

A process chamber is divided into an upper and lower chamber, with a grounded ion filter separating them, allowing radicals to diffuse from the upper chamber to the lower while blocking ions, enabling ion-free surface modification in ALE and high-energy ion generation for precise etching in the lower chamber, and incorporating advanced gas/precursor delivery systems for optimized ALE and ALD processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If RIE process is used to achieve high etching rates through synergistic ion and neutral fluxes, then etching efficiency is improved, but uniformity and consistency across 300 mm wafers deteriorate

Engineering Contradiction:

Improveetching rateVSAvoiduniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent divides the process chamber into an upper chamber for plasma generation and a lower chamber for substrate processing, separated by a grounded ion filter. This segmentation allows independent optimization of ion flux (in upper chamber) and neutral flux (in lower chamber), enabling high etching rates while maintaining uniformity across the wafer surface.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent extracts ions from the lower chamber using a grounded ion filter, removing the harmful synergistic effect that causes non-uniformity. Only neutral species and radicals are allowed to reach the substrate in the lower chamber, eliminating the uniformity problems associated with conventional RIE while preserving high etching rates through controlled neutral flux.

Inventive Principle:

Principle #2Taking out (Extraction)

2Productivity

If ion flux is introduced during surface modification step to enhance etching, then material removal efficiency is improved, but ideality of ALE process and etching profile quality deteriorate

Engineering Contradiction:

Improvematerial removal efficiencyVSAvoidetching profile quality

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The grounded ion filter acts as an intermediary between the upper and lower chambers. It selectively blocks ions while allowing neutral species and radicals to pass through, enabling the surface modification step to proceed with high material removal efficiency while maintaining the ideality of the ALE process and producing desirable etching profiles.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Manufacturing precision

If multiple coils and gas injection points are added to improve plasma uniformity, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:

Improveplasma uniformityVSAvoidapparatus complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses chamber segmentation with a grounded ion filter to achieve plasma uniformity without adding multiple coils or gas injection points. The upper chamber generates plasma while the lower chamber receives filtered neutral species, simplifying the apparatus compared to conventional approaches that require multiple plasma sources and injection points.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the precision and efficiency of ALE and ALD processes, particularly for high aspect ratio structures, by ensuring precise control over etching and deposition, improving the quality and consistency of semiconductor devices.

Implementation Method 1

a grounded ion filter separating them, allowing radicals to diffuse from the upper chamber to the lower while blocking ions

Methodology Applied

Scientific EffectIon blocking: Filter (physical)

Implementation Method 2

allowing radicals to diffuse from the upper chamber to the lower while blocking ions

Methodology Applied

Scientific EffectRadical diffusion: Diffusion

Implementation Method 3

The upper chamber contains a plasma source and operates as an inductively coupled plasma (ICP) reactor

Methodology Applied

Scientific EffectPlasma generation: Plasma

Implementation Method 4

The upper chamber contains a plasma source and operates as an inductively coupled plasma (ICP) reactor

Methodology Applied

Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS20260066245A1Atomic Layer Process Chamber for Optimal Etching and Deposition with Controlled Ion and Radical Exposure

Publication Date: 2026.03.05 INSPIRING ATOMS PTE LTD

AI summary

A plasma process chamber, divided into upper and lower sections by a grounded ion filter (GIF), is designed to optimize both ALE and ALD processes. In the ALE process, the substrate in the lower chamber is modified by chemically active neutrals, while ions are blocked by the GIF, enhancing process precision and ideality. During the ALD process, the plasma activation step utilizes radicals without ion interference, improving film conformity, particularly on high aspect ratio structures. This integrated chamber design ensures precise control and optimal conditions for both ALE and ALD, facilitating advanced semiconductor fabrication.