Ion Gel Semiconductor Module for Dielectric Breakdown
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Solution Overview
Problem
Semiconductor modules face challenges in reducing electric field concentration and dielectric breakdown voltage, particularly at the intersections between the insulating substrate and conductive plates, limiting the thickness of the insulating substrate and increasing production costs.
Innovation Solution
A semiconductor module design incorporating an ion gel with an ionic liquid is applied to the boundary edges of the conductive plates and insulating substrate, allowing the ionic liquid to distribute according to electric potential gradients and terminate local electric fields, thereby alleviating field concentration and enhancing dielectric breakdown voltage, enabling a thinner insulating substrate and reduced production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional creeping breakdown prevention members with relative permittivity up to 8.8 are used, then some electric field concentration is alleviated, but the dielectric breakdown voltage is insufficient and the insulating substrate thickness cannot be reduced
Solution Approach 1:
The patent changes the permittivity parameter of the insulating material from conventional values (up to 8.8) to ultra-high permittivity values (50 or higher) by using composite materials containing high-permittivity ceramic particles such as barium titanate, lead zirconate titanate, or calcium zirconate titanate dispersed in an insulating resin matrix. This parameter change enables sufficient electric field concentration reduction with thinner insulating substrates
Solution Approach 2:
The patent employs composite materials consisting of high-permittivity ceramic particles (barium titanate, lead zirconate titanate, calcium zirconate titanate) dispersed in an insulating resin matrix. This composite structure combines the high permittivity of ceramics with the mechanical properties and processability of polymers, achieving both thin substrate design and high dielectric breakdown voltage
2Ease of manufacture
If the insulating substrate thickness is reduced to lower production costs, then manufacturing costs decrease, but the substrate becomes more prone to creeping breakdown under stronger electric fields
Solution Approach 1:
The patent changes the permittivity parameter to ultra-high values (50 or higher) using composite materials, which allows the insulating substrate thickness to be reduced while maintaining or improving creeping breakdown resistance. The high permittivity compensates for the reduced thickness, keeping the electric field strength within safe limits
Solution Approach 2:
The patent applies high-permittivity composite material specifically at critical regions where electric field concentration occurs, such as around conductive plates and at interfaces. This localized application of high-permittivity material provides enhanced protection against creeping breakdown exactly where needed, allowing overall substrate thickness reduction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ion gel effectively reduces electric field concentration and improves dielectric breakdown voltage, allowing for a thinner insulating substrate and lower production costs while maintaining high voltage operation reliability.
Implementation Method 1
the ionic liquid contained in the ion gel moves within the ion gel according to the resulting electric potential gradient and gets distributed near the surface of the first conductive plate and/or near the surface of the insulating substrate at the intersections
Implementation Method 2
thereby terminating local lines of electric force. This alleviates electric field concentration at the intersections and improves the dielectric breakdown voltage
Data Source
AI summary
A semiconductor module includes an insulated circuit board that includes an insulating substrate, a first conductive plate arranged on a first principal surface of the insulating substrate and within the outer edges of the insulating substrate, and a second conductive plate arranged within the outer edges of the insulating substrate on a second principal surface of the insulating substrate that faces the first principal surface. Furthermore, boundary edges between the first principal surface of the insulating substrate and the side faces of the first conductive plate are covered by an ion gel that contains an ionic liquid.