Ion Implantation Dose Compensation for Uniform Beam Exposure
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Solution Overview
Problem
Current ion implantation systems suffer from non-uniform application of ion beams to substrates due to photoresist outgassing, leading to lower-quality semiconductor products and increased manufacturing costs.
Innovation Solution
An ion implantation apparatus with an energy filter and dose compensation controller that adjusts the position of the platen and electrode parameters to ensure uniform application of the ion beam by determining current values from power supplies and energy filter potentials, allowing for precise control of ion beam energy and direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion beam application is performed without dose compensation, then the process is simple and fast, but the ion beam application becomes non-uniform due to photoresist outgassing
Solution Approach 1:
The system employs feedback control by continuously monitoring the actual ion beam dose applied to the substrate and comparing it with the target dose. The controller adjusts the power supply parameters in real-time based on this feedback to compensate for photoresist outgassing effects, ensuring uniform ion beam application despite process variations.
Solution Approach 2:
The system dynamically changes power supply parameters (voltage, current) to the ion source and beamline components during the ion implantation process. By adjusting these parameters in response to detected dose deviations, the system maintains uniform ion beam application even as photoresist outgassing conditions evolve during processing.
2Manufacturing precision
If photoresist outgassing is present during ion implantation, then the existing system operates without additional controls, but the ion beam application becomes non-uniform
Solution Approach 1:
The system converts the harmful effect of photoresist outgassing into useful information by monitoring changes in ion beam current caused by outgassing. These changes are used as feedback signals to adjust power supply parameters, transforming the previously detrimental outgassing phenomenon into a detectable parameter that drives compensation actions.
Solution Approach 2:
The system applies preliminary compensation by adjusting power supply parameters before significant dose non-uniformity develops. The controller proactively modifies ion source and beamline parameters in response to early detection of outgassing effects, preventing rather than merely correcting dose non-uniformity.
3Manufacturing precision
If the platen position is adjusted in real-time for dose compensation, then uniform ion beam application is achieved, but the processing time increases
Solution Approach 1:
The system employs dynamic platen position adjustment during the ion implantation process. Rather than static positioning, the platen is moved in real-time based on feedback from dose monitoring, allowing the system to adapt to changing outgassing conditions and maintain uniform dose distribution throughout the substrate.
Solution Approach 2:
The system performs preliminary position adjustments at the beginning of the ion implantation process and at transition points between different dose regions. By pre-positioning the platen according to predicted outgassing patterns and process parameters, the system minimizes the need for frequent corrections during processing, thereby reducing overall processing time while maintaining uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Ensures uniform application of the ion beam to the substrate, reducing photoresist outgassing effects and improving semiconductor product quality while minimizing processing time and costs.
Implementation Method 1
an ion source configured to generate an ion beam directed at a substrate positioned on a platen, a first power supply source configured to generate a powering potential to power the ion source
Implementation Method 2
an energy filter positioned in a path of the ion beam between the ion source and the substrate
Implementation Method 3
one or more second power supply sources configured to generate an accelerating potential or a decelerating potential. The accelerating potential or the decelerating potential may be configured to affect generation of the ion beam by the ion source
Data Source
AI summary
A method, a system and computer program product for controlling exposure of a substrate positioned on a platen in an ion implantation system to an ion beam. A first current value determined based on a powering potential powering an ion source is received. A second current value determined based on an accelerating potential or a decelerating potential supplied to the ion implantation apparatus and affecting generation of the ion beam by the ion source for application to a substrate positioned on a platen is received. One or more energy filter supply current values are determined based on one or more energy filter supply potentials supplied to an energy filter positioned in the path of the ion beam. Platen position values are generated based on the first and second current values and energy filter supply current values. A position of the platen is adjusted using platen position values.