Ion Implantation Apparatus Beam Scanning and Parallelizing
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Solution Overview
Problem
Ion implantation apparatuses are limited by their categorization into high-current, medium-current, and high-energy categories, leading to compatibility issues and reduced productivity due to the need for multiple apparatuses to handle different processing requirements, as each category has distinct configurations and implantation characteristics.
Innovation Solution
An ion implantation apparatus and method that combines the functionality of high-current and medium-current systems by using a beam scanning unit and a beam parallelizing unit with a focal point adjustment mechanism to compensate for space charge effects, allowing for a broader range of energy and dose implantation capabilities without changing the apparatus type.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If ion implantation apparatuses are categorized into high-current, medium-current, and high-energy categories with distinct configurations, then each category can be optimized for its specific implantation requirements, but multiple apparatuses are required to handle different processing needs, reducing productivity and increasing cost
Solution Approach 1:
The patent applies universality by designing a single ion implantation apparatus that can perform both high-current and medium-current implantation operations. The beamline configuration and power supply system are designed to accommodate different current ranges, allowing one apparatus to replace multiple specialized apparatuses, thereby improving productivity while maintaining adaptability across different implantation requirements
Solution Approach 2:
The patent employs dynamics through adjustable power supply connections and selectable beam extraction modes. The ion source can dynamically switch between different power supply connection configurations to extract ion beams with varying current levels, enabling the apparatus to adapt its performance characteristics based on the specific processing requirements without requiring physical reconfiguration or multiple fixed-configuration apparatuses
2Reliability
If different categories of ion implantation apparatuses are used for different processing requirements, then optimal performance for each specific application is achieved, but compatibility issues arise and multiple expensive equipment setups are needed
Solution Approach 1:
The patent implements universality by creating a unified apparatus design that maintains reliable implantation performance across different current categories. The beamline, power supply system, and control mechanisms are designed to provide consistent and reliable operation whether operating in high-current or medium-current mode, eliminating the need for multiple specialized apparatuses while maintaining the reliability required for each specific application
Solution Approach 2:
The patent applies parameter changes by enabling the ion source to operate with different power supply connection configurations that alter the extracted ion beam current level. By changing the electrical parameters and power supply connections, the same apparatus can reliably perform implantation across different current ranges, reducing device complexity and eliminating compatibility issues between different apparatus categories
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient operation across a wide range of energy and dose conditions, improving productivity by allowing a single apparatus to perform tasks previously requiring multiple machines, thus enhancing manufacturing efficiency and reducing the need for multiple, costly equipment setups.
Implementation Method 1
a divergence phenomenon caused by a space charge effect in an exiting ion beam from the beam parallelizing unit is compensated
Data Source
AI summary
An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.