Ion Implantation System DC Acceleration RF LINAC Removal
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Solution Overview
Problem
High energy ion implanters with RF LINACs face issues with imperfect velocity matches and component degradation due to space and cost constraints, leading to poor ion transmission and increased complexity in manufacturing and operation when trying to accommodate a wide range of ion energies and species.
Innovation Solution
A high energy ion implantation system with a simplified configuration that uses a DC acceleration/deceleration method and a final energy filter magnet, allowing for adjustable ion velocities and flexible operation modes by removing the RF linear ion acceleration unit, and incorporating a two-dimensional scan end-station for uniform dose implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If RF LINAC is used to accelerate ions to high energy, then ion beam energy is improved, but beam transmission rate deteriorates due to imperfect velocity matches
Solution Approach 1:
The system changes the acceleration method from RF LINAC to DC electrostatic acceleration, allowing continuous adjustment of ion beam energy parameters. This enables perfect velocity matching for different ion species while maintaining high transmission rates, as the DC field can be precisely tuned to match the specific energy requirements of each ion type without the velocity mismatch problems inherent in RF systems.
2Adaptability or versatility
If RF LINAC with multiple resonator cavities is used to accommodate wide range of ion energies, then ion beam energy range is improved, but device complexity increases
Solution Approach 1:
The invention extracts and removes the complex RF LINAC system with its multiple resonator cavities from the implantation system. Instead, it employs a simpler DC electrostatic acceleration system that achieves the same energy range adaptability through continuous voltage adjustment, eliminating the need for multiple fixed-energy resonator cavities and significantly reducing system complexity.
Solution Approach 2:
The DC electrostatic acceleration system serves as a universal accelerator that can handle a wide range of ion energies and species through continuous parameter adjustment. This single system replaces the need for multiple specialized RF cavities, each designed for specific energy ranges, thereby achieving multi-functionality with reduced complexity.
3Use of energy by moving object
If RF LINAC is used for high energy ion implantation, then ion beam energy is improved, but manufacturing cost increases
Solution Approach 1:
The invention replaces expensive RF LINAC components with more affordable DC electrostatic acceleration components. The DC system uses simpler electrical fields and fewer precision-machined resonator cavities, resulting in lower manufacturing costs while achieving the same high energy ion implantation capabilities.
4Use of energy by moving object
If RF LINAC is used for high energy ion implantation, then ion beam energy is improved, but operation complexity increases
Solution Approach 1:
The DC electrostatic acceleration system allows for straightforward parameter adjustment of ion beam energy through voltage control, eliminating the complex RF frequency and phase adjustments required in LINAC systems. This makes the system easier to operate and maintain while providing the same high energy capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This system achieves high beam transmission rates and flexible operation for various ion species with reduced costs and complexity, enabling smooth energy and species variations while ensuring reliable and accurate ion implantation.
Implementation Method 1
A high energy ion implantation system with a simplified configuration that uses a DC acceleration/deceleration method
Implementation Method 2
incorporating a two-dimensional scan end-station for uniform dose implantation
Data Source
AI summary
An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.


