3D Feature Formation via Ion Implantation and Isotropic Etching
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Solution Overview
Problem
Conventional lithography processes, including nano-imprint lithography, are limited in forming complex three-dimensional structures with inclined edges, requiring complex and costly optical systems and offering restricted pattern shapes.
Innovation Solution
A method involving forming a resist structure with varying thicknesses on a substrate, implanting charged particles through specific resist portions to create regions with varying etch rates, and using isotropic etching to generate three-dimensional features with inclined edges, where the implanted regions have either higher or lower etch rates than non-implanted areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography processes are used to form patterns on substrates, then precise pattern transfer can be achieved, but the process requires complex and costly optical systems
Solution Approach 1:
The patent replaces the optical system with a particle beam system (ion implantation). Instead of using complex optical components to define and transfer patterns, the invention uses a particle beam to directly modify the substrate material through selective implantation, thereby achieving pattern formation without the need for expensive and complex optical manipulation equipment
Solution Approach 2:
The patent changes the fundamental parameter used for pattern formation from optical wavelength to particle beam energy and distribution. By controlling the energy, angle, and spatial distribution of implanted particles, the system achieves precise pattern transfer through material modification rather than optical projection, eliminating the need for complex optical systems
2Manufacturing precision
If conventional lithography processes are used to form patterns on substrates, then precise pattern transfer can be achieved, but the cost of the process increases
Solution Approach 1:
The patent replaces the optical system with a particle beam system (ion implantation). Instead of using complex optical components to define and transfer patterns, the invention uses a particle beam to directly modify the substrate material through selective implantation, thereby achieving pattern formation without the need for expensive and complex optical manipulation equipment
Solution Approach 2:
The patent employs a simpler particle beam delivery system that can be more cost-effective than high-end optical lithography equipment. The particle beam source and delivery mechanism represent a more economical approach compared to the expensive optical components, mirrors, and lenses required in conventional lithography systems
3Device complexity
If nano-imprint lithography is used to form patterns on substrates, then the process becomes less complex and less costly, but the shape of the image or pattern that can be formed is limited
Solution Approach 1:
The patent changes the fundamental parameter used for pattern formation from optical wavelength to particle beam energy and distribution. By controlling the energy, angle, and spatial distribution of implanted particles, the system achieves precise pattern transfer through material modification rather than optical projection, eliminating the need for complex optical systems
Solution Approach 2:
The patent applies particle implantation with spatially varying parameters (energy, angle, concentration) to create locally differentiated regions in the substrate. This allows formation of complex three-dimensional structures with varying properties across different regions, overcoming the shape limitations of nano-imprint lithography while maintaining process simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of three-dimensional features with inclined edges on substrates, overcoming the limitations of conventional lithography by simplifying the process and reducing costs through the use of isotropic etching and ion implantation, allowing for more complex pattern creation.
Implementation Method 1
implanting charged particles into the substrate through the first and second resist portions and forming an implanted region in the substrate
Implementation Method 2
etching the substrate to form the 3D feature on the substrate
Data Source
AI summary
Techniques for forming a three dimensional (3D) feature on a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method comprising: forming a resist structure on the substrate, the resist structure having a first resist portion with a first thickness, a second resist portion with a second thickness, and a third resist portion with a third thickness, where the first thickness may be less than the second thickness, and where the second thickness may be less than the third thickness; implanting charged particles into the substrate through the first and second resist portions and forming an implanted region in the substrate; and etching the substrate to form the 3D feature on the substrate.