Ion Implantation System with Graphite Electrode Deceleration
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Solution Overview
Problem
Traditional ion implantation systems face issues with ion beam width exceeding wafer size, leading to secondary contamination and inefficient detection, as well as difficulties in forming large atomic groups and achieving accurate ion implantation on larger silicon wafers.
Innovation Solution
An ion implantation system with a target plate device featuring a graphite electrode unit and a power supply to decelerate the ion beam, a shielding unit to prevent unwanted bombardment, and a faraday cup array with a micro-magnetic field for adjusting and detecting the ion beam, along with an ion emitting device that enhances ion beam current and forms large atomic or molecular groups.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the ion beam width is increased to cover larger wafer areas, then the implantation coverage is improved, but secondary contamination occurs due to bombardment of back walls and other device parts
Solution Approach 1:
The patent extracts and removes the harmful scattered ions from the system by installing a scattering ion collection plate positioned to receive and collect ions that scatter during implantation, preventing these ions from contaminating the wafer surface and resolving the contradiction between wide beam coverage and contamination control
Solution Approach 2:
The patent introduces a scattering ion collection plate as an intermediary component between the ion beam path and the wafer, which intercepts and collects scattered ions before they can cause contamination, allowing wide beam implantation without the harmful effects of ion scattering
2Device complexity
If a single faraday cup is used to detect ion beam parallel performance, then the detection structure is simple, but the detection efficiency is low and results are not accurate
Solution Approach 1:
The patent divides the single detection function into multiple segmented faraday cups arranged in an array, where each cup measures ion beam parameters at different positions and angles, providing comprehensive and accurate detection of ion beam parallel performance while maintaining reasonable structural complexity
Solution Approach 2:
The patent employs multiple faraday cups beyond the minimum single cup requirement, creating an excessive detection array that captures ion beam characteristics from multiple perspectives simultaneously, significantly improving measurement precision and efficiency despite increased structural complexity
3Device complexity
If traditional ion source configuration is used, then the device structure is simple, but large atomic groups are difficult to form and ion number is insufficient
Solution Approach 1:
The patent implements a nested configuration where the ion source is positioned within or integrated with the acceleration and implantation chamber structure, allowing ions to be generated, accelerated, and implanted through a compact nested arrangement that enhances ion formation efficiency and quantity while controlling overall device complexity
Solution Approach 2:
The patent merges multiple functional components including the ion source, acceleration electrodes, and implantation chamber into an integrated configuration, combining these functions in a unified structure that improves ion generation and delivery efficiency, increasing the number of ions available for implantation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents secondary contamination, improves ion implantation uniformity and efficiency, and increases the number of ions implanted, ensuring accurate and effective ion implantation on larger wafers by controlling the ion beam and enhancing ion beam current.
Implementation Method 1
the power supply unit applies a voltage to the graphite electrode to generate an electric field in the opposite direction from the electric field generated by the ion beam motion, for reducing the speed of the ion beam implanted to a location outside the wafer to be processed
Implementation Method 2
Ion implantation is ionizing elements to be implanted, the positive ions are separated and accelerated to form a high-energy ion flow with the tens of thousands of electron volts
Implementation Method 3
the target plate device further comprises a faraday cup array, a micro-magnetic field array, and a control unit
Data Source
AI summary
The invention provided an ion implantation system. The ion implantation system comprises an ion emitting device and a target plate device; the target plate device comprises a graphite electrode unit and a power supply unit; the graphite electrode unit is mounted on the lower end of a support frame, and the graphite electrode unit is a hollow structure; the graphite electrode unit comprises a graphite electrode and a hollow region I, the graphite electrode is connected to the power supply unit; the area of the hollow region I is smaller than that of the wafer to be processed, and the sum of the area of the graphite electrode and the area of the hollow region I is larger than an implantation area of the ion beam. When the ion beam is implanted to the wafer to be processed on a target plate for ion implantation, the power supply unit applies a voltage to the graphite electrode to generate an electric field in the opposite direction from the electric field generated by the ion beam motion, accordingly, the speed of the ion beam implanted to a location outside the wafer to be processed is reduced, and secondary contamination during ion implantation is avoided, so as to perform an ion implantation process more efficiently.