Temperature-Controlled Ion Implantation Platen

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Solution Overview

Problem

Current temperature-controlled ion implantation technologies face challenges in achieving high-temperature ion implantation with single-wafer ion implanters, particularly in terms of throughput, contamination, and compatibility with plasma doping systems, as existing methods are inefficient and not suitable for large substrates or multiple ion species.

Innovation Solution

The implementation of a temperature-controlled ion implantation apparatus and method using a platen with external heating elements to maintain a predetermined temperature profile during ion implantation, accompanied by pre-heating, post-cooling stations to enhance throughput and reduce contamination, and the integration of plasma doping capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If high-temperature ion implantation is performed in batch-wafer ion implanters, then temperature control is achieved, but throughput is low and the system is specialized for oxygen implantation only

Engineering Contradiction:

Improvewafer temperatureVSAvoidthroughput

Core Design Contradiction:

TemperatureVSProductivity

Solution Approach 1:

The single-wafer ion implanter is designed to handle multiple ion species (not just oxygen) while maintaining high-temperature capability, making the system universal and multi-functional for various doping applications in semiconductor manufacturing

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

A pre-heating station is implemented to heat wafers to the required temperature before implantation, and a post-cooling station is added to cool wafers after processing. This preliminary and follow-up thermal conditioning enables high-temperature implantation while maintaining high throughput by preparing wafers in advance and quickly cooling them post-process

Inventive Principle:

Principle #10Preliminary action

2Temperature

If research-environment high-temperature ion implantation is performed on small substrates, then temperature control is achieved, but contamination levels are high and throughput is insufficient for large substrates

Engineering Contradiction:

Improvewafer temperatureVSAvoidcontamination

Core Design Contradiction:

TemperatureVSObject-affected harmful factors

Solution Approach 1:

A platen is introduced as an intermediary component between the wafer and the heating/cooling systems. The platen provides a stable, controlled thermal interface that enables uniform temperature distribution across large substrates while minimizing contamination through its designed surface properties and positioning mechanism

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The system transitions from heating small substrates in a research environment to processing large production wafers by scaling up the platen and heating element array dimensions, enabling the same temperature control principles to apply to industrial-scale substrates

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If external heating elements are used to heat the wafer, then temperature profile control is improved, but device complexity increases

Engineering Contradiction:

Improvetemperature profile controlVSAvoidheating system complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The heating system is segmented into an array of independent heating elements arranged on the platen, allowing each element to be controlled individually to create precise temperature profiles across different regions of the wafer surface

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The system replaces complex internal wafer heating mechanisms with external heating elements positioned near the wafer, using radiant or conductive heat transfer instead of embedded heating, thereby simplifying the overall device architecture while maintaining precise temperature control

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables high-throughput, contamination-reduced high-temperature ion implantation suitable for large substrates and multiple ion species, improving semiconductor manufacturing efficiency and process yield by maintaining precise temperature control and compatibility with plasma doping systems.

Implementation Method 1

an array of heating elements to heat the wafer while the wafer is held on the platen

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Implementation Method 2

a post-implant cooling station to cool down the wafer after ion implantation of the wafer

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS7655933B2Techniques for temperature-controlled ion implantation

Publication Date: 2010.02.02 VARIAN SEMICON EQUIP ASSC INC

AI summary

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.