Ion Implantation Tilt Control Using Ejected Ion Distribution
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Solution Overview
Problem
Existing ion implantation processes face challenges in achieving precise control over tilt angles, leading to deviations from theoretical doping profiles due to factors like atom arrangement, ion species, and equipment errors, resulting in increased channeling effects and substrate damage.
Innovation Solution
An ion implantation apparatus and method that utilizes an ion-collecting device to record the distribution and number of ejected ions, adjusting the tilt angle based on collected data to minimize ejected and channeling ions, thereby optimizing the doping profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the tilt angle is not precisely controlled, then the implantation process is simpler to operate, but the doping profile deviates from theoretical values and channeling effects increase
Solution Approach 1:
The system employs a feedback mechanism where a detector monitors the distribution of ejected ions during ion implantation. The control unit receives this detection signal and adjusts the tilt angle of the ion beam based on the detected ion distribution, creating a closed-loop control system that maintains precise doping profiles while adapting to variations in the implantation process
Solution Approach 2:
The patent replaces complex mechanical tilt angle adjustment mechanisms with a system that uses electromagnetic fields to control ion beam direction. The control unit adjusts the tilt angle by modifying electromagnetic field parameters rather than relying on complex mechanical positioning systems, thereby reducing mechanical complexity while maintaining precision
2Reliability
If the tilt angle deviates from theoretical values, then the implantation process is more tolerant to variations, but substrate damage increases due to channeling effects
Solution Approach 1:
The detector continuously monitors the distribution of ejected ions, and the control unit uses this feedback to dynamically adjust the tilt angle, ensuring it remains within the optimal range that prevents channeling effects and substrate damage while maintaining manufacturing precision
Solution Approach 2:
The system performs preliminary detection of ion distribution before completing the implantation process. By detecting the tilt angle accuracy in advance and making necessary adjustments, the system prevents substrate damage from occurring rather than correcting it after the fact
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the precision and quality of ion implantation by reducing ejected and channeling ions, minimizing substrate damage, and ensuring accurate doping profiles.
Implementation Method 1
In an IMP process, ions are accelerated to bombard a solid target (e.g., substrate or film), thereby changing the properties (e.g., physical, chemical, and/or electrical properties) of the target
Implementation Method 2
collect a distribution and a number of ejected ions from the ion beam scan over the target
Data Source
AI summary
The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.