Ion Implantation Apparatus Variable Scanning Speed Dose Control
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Solution Overview
Problem
Conventional ion implantation methods using step rotation of the substrate are limited and cannot form non-rotationally symmetric dose amount distributions, especially when a tilt angle greater than zero degrees is required, leading to variations in semiconductor device properties and reduced yield.
Innovation Solution
An ion implantation method and apparatus that reciprocatively scans an ion beam in one direction and mechanically drives the substrate in a perpendicular direction, with the substrate's driving speed proportional to the ion beam's current density, allowing for variable scanning speeds to form distinct circular and peripheral implantation regions without substrate rotation, enabling dose amount distributions other than rotationally symmetric.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If step rotation implantation is used to form circular and peripheral implantation regions, then dose amount distribution can be controlled, but the method cannot be applied when tilt angle greater than zero degrees is required and cannot form non-rotationally symmetric dose amount distributions
Solution Approach 1:
The invention extracts the substrate rotation step from the implantation process, eliminating the need for substrate rotation while maintaining the capability to form circular and peripheral implantation regions with controlled dose amounts through beam scanning alone
Solution Approach 2:
Instead of rotating the substrate to achieve dose distribution control, the invention inverts the approach by keeping the substrate stationary and using the ion beam scanning system to create the desired dose amount distribution patterns
2Manufacturing precision
If substrate is rotated during ion implantation, then circular and peripheral implantation regions can be formed, but direction changes affect implantation properties when tilt angle is greater than zero degrees
Solution Approach 1:
The invention removes substrate rotation from the process, eliminating the direction change issue that affects implantation properties when tilt angles are used, while still achieving precise dose distribution through beam scanning control
3Reliability
If conventional ion implantation method is used, then processing can be performed, but dose amount distribution varies between circular and peripheral regions leading to property variation in semiconductor devices
Solution Approach 1:
The invention applies local quality by enabling different dose amounts to be selectively implanted in circular and peripheral regions of the substrate, allowing correction of property variations in specific regions while maintaining uniformity where needed
Solution Approach 2:
The invention uses dynamic control of the ion beam scanning speed to achieve precise dose amount distribution, where the scanning speed is adjusted according to the desired dose amount to create different implantation regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for stable and flexible dose amount distributions, improving semiconductor device property uniformity and enabling ion implantation with tilt angles greater than zero degrees without the issues of direction changes affecting implantation properties.
Implementation Method 1
ion implantation is performed both by reciprocatively scanning an ion beam in an X direction by an electric field or a magnetic field
Implementation Method 2
ion implantation is performed both by reciprocatively scanning an ion beam in an X direction by an electric field or a magnetic field
Implementation Method 3
mechanically driving the substrate in a Y direction intersecting the X direction
Data Source
AI summary
An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.