Ion-Implanted Film Layer for Lower-Dose EUV Photoresist Patterning
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Solution Overview
Problem
Conventional EUV lithography processes require high energy and long exposure times, making it challenging to reliably form submicron and smaller features in semiconductor devices, and there is a need for a method to reduce EUV dose and energy usage.
Innovation Solution
The method involves implanting a dielectric film layer with ions, such as iodine and indium, beneath a metal oxide photoresist, which generates secondary electrons to reduce EUV dose and energy requirements, allowing for more efficient patterning and increased throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional EUV lithography process is used, then submicron features can be formed, but high energy and long exposure time are required
Solution Approach 1:
The patent applies preliminary action by implanting ions (such as iodine or indium) into the hardmask layer before the EUV lithography exposure step. This pre-treatment modifies the hardmask properties to enhance secondary electron generation during subsequent EUV exposure, thereby reducing the required EUV dose and energy consumption while maintaining feature formation capability
Solution Approach 2:
The patent changes physical parameters of the hardmask layer by introducing ion implantation with specific energies (e.g., 1-10 keV) and doses (e.g., 1E14-1E16 ions/cm²). This modifies the hardmask's electronic structure and secondary electron yield, enabling reduced EUV dose requirements while preserving submicron feature formation precision
2Manufacturing precision
If conventional EUV lithography process is used, then submicron features can be formed, but long exposure time is required
Solution Approach 1:
The ion implantation into the hardmask layer is performed as a preliminary step before EUV exposure. This pre-modification of the hardmask enhances secondary electron generation efficiency during exposure, allowing the same patterning quality to be achieved in shorter exposure times
Solution Approach 2:
By changing the physical state of the hardmask through ion implantation (introducing defects, modifying band structure), the patent increases the secondary electron yield per incident EUV photon, thereby reducing the total exposure time needed to achieve the required manufacturing precision
3Manufacturing precision
If metal oxide photoresist is used, then patterning can be achieved, but significant EUV energy is consumed
Solution Approach 1:
The patent introduces the ion-implanted hardmask layer as an intermediary between the EUV source and the metal oxide photoresist. This intermediate layer acts as a secondary electron generator that amplifies the effective exposure of the photoresist, reducing the direct EUV energy burden on the photoresist while maintaining patterning fidelity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves a 15%-30% reduction in EUV dose and improves the efficiency of the EUV lithography process by accurately controlling ion concentration and depth, enhancing the formation of submicron features in semiconductor devices.
Implementation Method 1
implanting the film layer with ions
Implementation Method 2
implanting the film layer with ions... which generates secondary electrons to reduce EUV dose and energy requirements
Data Source
AI summary
Disclosed herein are approaches for reducing EUV dose during formation of a patterned metal oxide photoresist. In one approach, a method may include providing a stack of layers atop a substrate, the stack of layers comprising a film layer, and implanting the film layer with ions. The method may further include depositing a metal oxide photoresist atop the film layer, and patterning the metal oxide photoresist.